R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 288
R4F24268NVRFQV
Manufacturer Part Number
R4F24268NVRFQV
Description
MCU 256KB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet
1.R4F24268NVZFQV.pdf
(1406 pages)
Specifications of R4F24268NVRFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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R4F24268NVRFQV
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Section 6 Bus Controller (BSC)
6.8.8
When the command interval specification from the ACTV command to the next READ/WRIT
command cannot be satisfied, 1 to 3 states (Trw) that output the NOP command can be inserted
between the Tr cycle that outputs the ACTV command and the Tc1 cycle that outputs the column
address by setting the RCD1 and RCD0 bits of DRACCR. Use the optimum setting for the wait
time according to the synchronous DRAM connected and the operating frequency of this LSI.
Figure 6.58 shows an example of the timing when the one Trw state is set.
Page 258 of 1372
Figure 6.58 Example of Access Timing when Row Address Output Hold State Is 1 State
Row Address Output State Control
Read
Write
Address bus
DQMU, DQML
DQMU, DQML
Precharge-sel
Data bus
Data bus
SDRAMφ
(RCD1 = 0, RCD0 = 1, SDWCD = 0, CAS Latency 2)
CKE
CKE
RAS
RAS
CAS
CAS
WE
WE
φ
Column
address
PALL
PALL
T
p
ACTV
ACTV
T
r
Row address
Row address
High
NOP
High
T
rw
NOP
READ
T
c1
Column address
H8S/2426, H8S/2426R, H8S/2424 Group
WRIT
T
cl
NOP
REJ09B0466-0350 Rev. 3.50
NOP
T
c2
Jul 09, 2010
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