MC912D60CCPVE Freescale Semiconductor, MC912D60CCPVE Datasheet - Page 101

IC MCU 16BIT 112-LQFP

MC912D60CCPVE

Manufacturer Part Number
MC912D60CCPVE
Description
IC MCU 16BIT 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HC12r
Datasheet

Specifications of MC912D60CCPVE

Core Processor
CPU12
Core Size
16-Bit
Speed
8MHz
Connectivity
CAN, MI Bus, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
68
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x8/10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Processor Series
HC912D
Core
HC12
Data Bus Width
16 bit
Data Ram Size
2 KB
Interface Type
CAN, SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
86
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC912D60CCPVE
Manufacturer:
FREESCAL
Quantity:
203
Part Number:
MC912D60CCPVE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
7.7.2 Normal Operation
7.7.3 Program/Erase Operation
7.8 Programming the Flash EEPROM
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor
The Flash EEPROM allows a byte or aligned word read in one bus cycle.
A misaligned word read requires an additional bus cycle. The Flash
EEPROM array responds to read operations only. Write operations are
ignored.
An unprogrammed Flash EEPROM bit has a logic state of one. A bit
must be programmed to change its state from one to zero. Erasing a bit
returns it to a logic one. The Flash EEPROM has a minimum
program/erase life of 100 cycles. Programming or erasing the Flash
EEPROM is accomplished by a series of control register writes.
The Flash EEPROM must be completely erased prior to programming
final data values.
Programming and erasing of Flash locations cannot be performed by
code being executed from the Flash memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Programming the Flash EEPROM is done on a row basis. A row consists
of 32 consecutive words (64 bytes) with rows starting from addresses
$XX00, $XX40, $XX80 and $XXC0. When writing a row care should be
taken not to write data to addresses outside of the row. Programming is
restricted to aligned word i.e. data writes to select rows/blocks for
programming/erase should be to even adresses and writes to any row
for programming should be to aligned words.
Flash Memory
FPGM
Programming the Flash EEPROM
maximum (40µs).
Technical Data
Flash Memory
101

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