MC912D60CCPVE Freescale Semiconductor, MC912D60CCPVE Datasheet - Page 102

IC MCU 16BIT 112-LQFP

MC912D60CCPVE

Manufacturer Part Number
MC912D60CCPVE
Description
IC MCU 16BIT 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HC12r
Datasheet

Specifications of MC912D60CCPVE

Core Processor
CPU12
Core Size
16-Bit
Speed
8MHz
Connectivity
CAN, MI Bus, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
68
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 16x8/10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Processor Series
HC912D
Core
HC12
Data Bus Width
16 bit
Data Ram Size
2 KB
Interface Type
CAN, SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
86
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC912D60CCPVE
Manufacturer:
FREESCAL
Quantity:
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Part Number:
MC912D60CCPVE
Manufacturer:
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Quantity:
10 000
Flash Memory
Technical Data
102
Use this step-by-step procedure to program a row of Flash memory.
This program sequence is repeated throughout the memory until all data
is programmed. For minimum overall programming time and least
program disturb effect, the sequence should be part of an intelligent
operation which iterates per row.
10. Wait for a time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write to any aligned word Flash address within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write one data word (two bytes) to the next aligned word Flash
7. Wait for a time, t
8. Repeat steps 6 and 7 until all the words within the row are
9. Clear the PGM bit.
operation and enables the latching of address and data for
programming.
range desired (with any data) to select the row.
address to be programmed. If BOOTP is asserted, an attempt to
program an address in the boot block will be ignored.
programmed.
mode again.
RCV
Flash Memory
(min 1µs), the memory can be accessed in read
NVS
PGS
FPGM
NVH
(min. 10µs).
(min. 5µs).
(min. 5µs).
(min. 30µs – max. 40µs).
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor

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