MC912D60CCPVE Freescale Semiconductor, MC912D60CCPVE Datasheet - Page 106

• Manufacturer Part Number: MC912D60CCPVE
• Description: IC MCU 16BIT 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MC912D60CCPVE

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: CAN, MI Bus, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 68
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• Processor Series: HC912D
• Core: HC12
• Data Bus Width: 16 bit
• Data Ram Size: 2 KB
• Interface Type: CAN, SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 86
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

EEPROM Memory
8.3 EEPROM Selective Write More Zeros
Technical Data
106
program/erase voltage. Programming voltage is derived from the
internal V
The EEPROM can be programmed such that one or multiple bits are
programmed (written to a logic “0”) at a time. However, the user should
never program any bit more than once before erasing the entire byte. In
other words, the user is not allowed to over write a logic “0” with another
“0’.
For some applications it may be advantageous to track more than 10k
events with a single byte of EEPROM by programming one bit at a time.
For that purpose, a special selective bit programming technique is
available. An example is shown here.
Original state of byte = binary 1111:1111 (erased)
First event is recorded by programming bit position 0
Program write = binary 1111:1110;
Second event is recorded by programming bit position 1
Program write = binary 1111:1101;
Third event is recorded by programming bit position 2
Program write = binary 1111:1011;
Fourth event is recorded by programming bit position 3
Program write = binary 1111:0111;
Events five through eight are recorded in a similar fashion.
Note that none of the bit locations are actually programmed more than
once although the byte was programmed eight times.
When this technique is utilized, a program / erase cycle is defined as
multiple writes (up to eight) to a unique location followed by a single
erase sequence.
DD
supply with an internal charge pump.
EEPROM Memory
Result = binary 1111:1110
Result = binary 1111:1100
Result = binary 1111:1000
Result = binary 1111:0000
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor