MC912D60CCPVE Freescale Semiconductor, MC912D60CCPVE Datasheet - Page 115

• Manufacturer Part Number: MC912D60CCPVE
• Description: IC MCU 16BIT 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MC912D60CCPVE

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: CAN, MI Bus, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 68
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• Processor Series: HC912D
• Core: HC12
• Data Bus Width: 16 bit
• Data Ram Size: 2 KB
• Interface Type: CAN, SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 86
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.6 Program/Erase Operation
8.7 Shadow Word Mapping
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor
A program or erase operation should follow the sequence below if AUTO
bit is clear:
If the AUTO bit is set, steps 4 and 5 can be replaced by a step to poll the
EEPGM bit until it is cleared.
It is possible to program/erase more bytes or words without intermediate
EEPROM reads, by jumping from step 5 to step 2.
The shadow word is mapped to location $_FC0 and $_FC1 when the
NOSHW bit in EEMCR register is zero. The value in the shadow word is
loaded to the EEMCR, EEDIVH and EEDIVL after reset.
shows the mapping of each bit from shadow word to the registers
1. Reserved for testing. Must be set to one in user application.
2. Reserved. Must be set to one in user application for future compatibility.
1. Write BYTE, ROW and ERASE to desired value, write EELAT = 1
2. Write a byte or an aligned word to an EEPROM address
3. Write EEPGM = 1
4. Wait for programming,
5. Write EEPGM = 0
6. Write EELAT = 0
Shadow word location
$_FC0, bit 3:2
$_FC0, bit 1:0
$_FC1, bit 7:0
$_FC0, bit 6
$_FC0, bit 5
$_FC0, bit 4
$_FC0 bit 7
EEPROM Memory
Table 8-4. Shadow word mapping
t
PROG
or erase,
t
ERASE
EEMCR / NOBDML
EEMCR / FPOPEN
EEDIVCLK / bit 7:0
EEMCR / NOSHW
EEMCR / bit 5
EEDIVH / bit 1:0
not mapped
Register / Bit
delay time (10ms)
Program/Erase Operation
EEPROM Memory
Table 8-4
(2)
(1)
Technical Data
115