HD64F2166VTE33 Renesas Electronics America, HD64F2166VTE33 Datasheet - Page 597

• Manufacturer Part Number: HD64F2166VTE33
• Description: IC H8S MCU FLASH 512K 144-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of HD64F2166VTE33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, LPC, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 106
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 40K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Bit
4
3
2
Bit Name Initial Value Slave Host Description
BEVTI
B2HI
H2BI
0
0
0
R/(W)* 
R/(W)* 
R/(W)* 
R/W
BEVT_ATN Clear Interrupt
This status flag indicates that the BEVT_ATN bit in
BTCR is cleared by the host. When the IBFIE3 bit
and BEVTIE bit are set to 1, IBFI3 interrupt is
requested to the slave.
0: [Clearing condition]
1: [Setting condition]
Read End Interrupt
This status flag indicates that the host has finished
reading all data from the BTDTR buffer. When the
IBFIE3 bit and B2HIE bit are set to 1, the IBFI3
interrupt is requested to the slave.
0: [Clearing condition]
1: [Setting conditions]
Write End Interrupt
This status flag indicates that the host has finished
writing all data to the BTDTR buffer. When the
IBFIE3 bit and H2BIE bit are set to 1, the IBFI3
interrupt is requested to the slave.
0: [Clearing condition]
1: [Setting condition]
When the slave reads BEVTI = 1 and writes 0 to
this bit.
When the slave detects the falling edge of
BEVT_ATN.
When the slave reads B2HI = 1 and writes 0 to
this bit.
ATNSW = 0: When the slave detects the falling
edge of B2H_ATN.
ATNSW = 1: When the slave detects the falling
edge of H_BUSY.
After the slave reads H2BI = 1, writes 0 to this bit.
When the slave detects the falling edge of
H2B_ATN.
Rev. 3.00, 03/04, page 555 of 830