DF2552BR26DV Renesas Electronics America, DF2552BR26DV Datasheet - Page 774
DF2552BR26DV
Manufacturer Part Number
DF2552BR26DV
Description
IC H8S/2552 MCU FLASH 176-LFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Specifications of DF2552BR26DV
Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2552BR26DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 20 Flash Memory
20.5
There are two kinds of flash memory program/erase protection: hardware and software protection.
20.5.1
Programming and erasing of flash memory is forcibly disabled or suspended by hardware
protection. In this state, the downloading of an on-chip program and initialization are possible.
However, an activated program for programming or erasure cannot program or erase locations in a
user MAT, and the error in programming/erasing is reported in the parameter FPFR.
Table 20.10 Hardware Protection
Rev. 6.00 Sep. 24, 2009 Page 726 of 928
REJ09B0099-0600
Item
Reset/standby
protection
Protection
Hardware Protection
Description
•
•
The program/erase interface registers
are initialized in the power-on reset
state (including a power-on reset by
the WDT) and standby mode and the
program/erase-protected state is
entered.
The reset state will not be entered by
a reset using the RES pin unless the
RES pin is held low until oscillation
has stabilized after power is initially
supplied. In the case of a reset during
operation, hold the RES pin low for the
RES pulse width that is specified in
the section on AC characteristics
section. If a reset is input during
programming or erasure, data values
in the flash memory are not
guaranteed. In this case, after holding
the RES pin low for 100 μs or longer,
execute erasure and then execute
program again.
Download
Function to Be Protected
Program/Erase
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