DF2552BR26DV Renesas Electronics America, DF2552BR26DV Datasheet - Page 953
DF2552BR26DV
Manufacturer Part Number
DF2552BR26DV
Description
IC H8S/2552 MCU FLASH 176-LFBGA
Manufacturer
Renesas Electronics America
Series
H8® H8S/2500r
Specifications of DF2552BR26DV
Core Processor
H8S/2000
Core Size
16-Bit
Speed
26MHz
Connectivity
I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
104
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
176-LFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2552BR26DV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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24.7
Table 24.13 shows the flash memory characteristics.
Table 24.13 Flash Memory Characteristics
Condition A
V
3.3 V ± 0.3 V (BUFGC1 and BUFGC2 in ICPCR are 1),
AV
8 to 26 MHz, T
specifications)
Condition B
V
3.3 V ± 0.3 V (BUFGC1 and BUFGC2 in ICPCR are 1),
AV
8 to 20 MHz, Ta = –40°C to +85°C (wide-range specifications)
Notes: 1. Programming/Erase time depends on the data.
Item
Programming time*
Erase time*
Programming time (total) *
Erase time (total) *
Programming/Erase time
(total) *
Count of reprogramming
Data hold time*
CC
CC
CC
CC
= P1V
= P1V
= 3.0 V to 5.5 V, V
= 3.0 V to 5.5 V, V
1
2. Programming/Erase time does not include the data transfer time.
3. The minimum times that all characteristics after reprogramming are guaranteed. (The
4. Data hold characteristics are when reprogramming is performed within the range of
5. The regular specifications are supported in the H8S/2506 Group only.
*
2
Flash Memory Characteristics
*
CC
CC
4
range between 1 and a minimum value is guaranteed.)
specifications including a minimum value.
1
= P2V
= P2V
*
3
a
4
= –20°C to +75°C (regular specifications)*
(for H8S/2552 Group, H8S/2506 Group):
(for H8S/2556 Group):
1
CC
CC
1
*
*
2
= 5.0 V ± 0.5 V (BUFGC1 and BUFGC2 in ICPCR are 0)/
= 5.0 V ± 0.5 V (BUFGC1 and BUFGC2 in ICPCR are 0)/
*
2
*
4
4
ref
ref
1
= 3.0 V to AV
= 3.0 V to AV
*
2
*
4
Symbo
l
t
t
∑
∑
∑
N
t
p
E
DRP
IP
IE
IPE
WEC
CC
CC
, V
, V
Min.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100*
10
SS
SS
= AV
= AV
3
Typ.
3
80
500
1000
7.5
10
7.5
10
15
20
⎯
⎯
SS
SS
= 0 V, φ= 32.768 kHz,
= 0 V, φ= 32.768 kHz,
5
, T
Max.
Rev. 6.00 Sep. 24, 2009 Page 905 of 928
30
800
5000
10000 ms/64 kbytes
22.5
30
22.5
30
45
60
⎯
⎯
a
= –40°C to +85°C (wide-range
Section 24 Electrical Characteristics
Unit
ms/128 bytes
ms/4 kbytes
ms/32 kbytes
s/384 kbytes
s/512 kbytes
s/384 kbytes
s/512 kbytes
s/384 kbytes
s/512 kbytes
Times
Year
REJ09B0099-0600
Test
Conditions
T
0
T
T
a
a
a
= 25°C, all
= 25°C
= 25°C
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