UPD78F1506GF-GAT-AX Renesas Electronics America, UPD78F1506GF-GAT-AX Datasheet - Page 996
UPD78F1506GF-GAT-AX
Manufacturer Part Number
UPD78F1506GF-GAT-AX
Description
MCU 16BIT 78K0R/LX3 128-LQFP
Manufacturer
Renesas Electronics America
Series
78K0R/Lx3r
Datasheet
1.UPD78F1500GK-GAK-AX.pdf
(1016 pages)
Specifications of UPD78F1506GF-GAT-AX
Core Processor
78K/0R
Core Size
16-Bit
Speed
20MHz
Connectivity
3-Wire SIO, I²C, LIN, UART/USART
Peripherals
DMA, LCD, LVD, POR, PWM, WDT
Number Of I /o
78
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 12x12b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
- Current page: 996 of 1016
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78K0R/Lx3
R01UH0004EJ0401 Rev.4.01
Jul 2, 2010
Flash
memory
On-chip
debug
function
BCD
correction
circuit
Instruction
set
Function
Security settings
Flash memory
programming by
self-
programming
Flash shield
window function
Connecting QB-
MINI2 to
78K0R/Lx3
Addition
Subtraction
PREFIX
instruction
Details of
Function
After the security setting for the batch erase is set, erasure cannot be performed for
the device. In addition, even if a write command is executed, data different from that
which has already been written to the flash memory cannot be written, because the
erase command is disabled.
If a security setting that rewrites boot cluster 0 has been applied, boot cluster 0 of
that device will not be rewritten, and the entire flash memory of the device will not be
erased in batch.
The self-programming function cannot be used when the CPU operates with the
subsystem clock.
In the self-programming mode, call the self-programming start library (FlashStart).
To prohibit an interrupt during self-programming, in the same way as in the normal
operation mode, execute the self-programming library in the state where the IE flag
is cleared (0) by the DI instruction. To enable an interrupt, clear (0) the interrupt
mask flag to accept in the state where the IE flag is set (1) by the EI instruction, and
then execute the self-programming library.
In low-power-consumption mode, use the regulator with f
executing self programming. For details of the low-power-consumption mode, see
CHAPTER 25 REGULATOR.
Disable DMA operation (DENn = 0) during the execution of self programming library
functions.
If the rewrite-prohibited area of the boot cluster 0 overlaps with the flash shield
window range, prohibition to rewrite the boot cluster 0 takes priority.
The 78K0R/Lx3 microcontrollers have an on-chip debug function, which is provided
for development and evaluation. Do not use the on-chip debug function in products
designated for mass production, because the guaranteed number of rewritable times
of the flash memory may be exceeded when this function is used, and product
reliability therefore cannot be guaranteed. NEC Electronics is not liable for problems
occurring when the on-chip debug function is used.
The value read from the BCDADJ register varies depending on the value of the A
register when it is read and those of the CY and AC flags. Therefore, execute the
instruction <3> after the instruction <2> instead of executing any other instructions.
To perform BCD correction in the interrupt enabled state, saving and restoring the A
register is required within the interrupt function. PSW (CY flag and AC flag) is
restored by the RETI instruction.
The value read from the BCDADJ register varies depending on the value of the A
register when it is read and those of the CY and AC flags. Therefore, execute the
instruction <3> after the instruction <2> instead of executing any other instructions.
To perform BCD correction in the interrupt enabled state, saving and restoring the A
register is required within the interrupt function. PSW (CY flag and AC flag) is
restored by the RETI instruction.
Set the ES register value with MOV ES, A, etc., before executing the PREFIX
instruction.
Cautions
APPENDIX C LIST OF CAUTIONS
CLK
fixed to 1 MHz when
p.848
p.848
p.850
p.850
p.850
p.850
p.850
p.854
p.856
p.864
p.860
p.861
Page
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996
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