MMC2107CFCPV33 Freescale Semiconductor, MMC2107CFCPV33 Datasheet - Page 218

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MMC2107CFCPV33

Manufacturer Part Number
MMC2107CFCPV33
Description
IC MCU 33MHZ 128K FLASH 144-LQFP
Manufacturer
Freescale Semiconductor
Series
MCorer
Datasheet

Specifications of MMC2107CFCPV33

Core Processor
M210
Core Size
32-Bit
Speed
33MHz
Connectivity
EBI/EMI, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
72
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
33 MHz
Number Of Programmable I/os
32
Number Of Timers
4 bit
Operating Supply Voltage
0 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No RoHS Version Available

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Non-Volatile Memory FLASH (CMFR)
9.8.5.2 Erase Margin Reads
Technical Data
218
State
S3
S4
S5
High voltage write enable: Erase margin
Erase operation: High voltage applied to
Erase margin read operation: Reads
reads occur. CMFR accepts erase hardware
interlock write. Normal register accesses
(except CMFRMCR). CMFRMCR write
causes NVM fuses to be cleared during the
high-voltage pulse. If CMFRMCR was
written, a CMFRMCR read returns the NVM
fuses value. CMFRCTL write can change
EHV. When HVS goes high, NVR and
PAWS are locked.
array blocks to erase bitcells. Pulse-width
timer active if SCLKR[2:0]
polled to time the erase pulse. During erase,
array cannot be accessed (bus error).
Normal register accesses. CMFRCTL write
can change only EHV.
determine if bits in selected blocks need
modification by the erase operation. Erased
bit reads as 1. All words in erased blocks
must be read to determine if erase is
complete.
Table 9-10 Erase Interlock State Descriptions (Continued)
Mode
The CMFR provides an erase margin read with electrical margin for the
erase state. Erase margin reads provide sufficient margin to assure
specified data retention. The erase margin read is enabled when
SES = 1 and the erase write has occurred. The erase margin read and
subsequent on-page erase verify reads return a 0 for any bit that has not
completely erased. Bits that have completed erasing read as a 1s. To
increase the access time of the erase margin read, the off-page access
time is 17 clocks instead of the usual 2-clock off-page read access time.
The erase margin read occurs while doing an off-page read. All locations
within the block(s) that are being erased must read as a 1 to determine
that no more erase pulses are required.
Freescale Semiconductor, Inc.
For More Information On This Product,
Non-Volatile Memory FLASH (CMFR)
0; HVS can be
Go to: www.freescale.com
State
Next
S1
S4
S1
S5
S4
S1
T6 Write SES = 0 or a master reset
T4 Write EHV = 1
T7 Master reset
T5 EHV = 0 and HVS = 0
T8 Write EHV = 1
T9 Write SES = 0 or a master reset
Transition Requirement
MMC2107 – Rev. 2.0
MOTOROLA

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