MMC2107CFCPV33 Freescale Semiconductor, MMC2107CFCPV33 Datasheet - Page 594

• Manufacturer Part Number: MMC2107CFCPV33
• Description: IC MCU 33MHZ 128K FLASH 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCorer

Specifications of MMC2107CFCPV33

• Core Processor: M210
• Core Size: 32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 33 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 4 bit
• Operating Supply Voltage: 0 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: No RoHS Version Available

Electrical Specifications
22.10 FLASH Memory Characteristics
Technical Data
594
Number of erase pulses
Erase pulse time
Erase recovery time
Number of program pulses
Program pulse time
Program recovery time
Maximum number of guaranteed program/ erase cycles
Data retention at average operating temperature of 85 C
11. Maximum source impedance is application-dependent. Error resulting from pin leakage depends on junction leakage into
12. For a maximum sampling error of the input voltage 1 LSB, then the external filter capacitor, C
1. Maximum pulses vary with V
1. A program/erase cycle is defined as switching the bits from 1
2. Reprogramming of a FLASH array block prior to erase is not required.
the pin and on leakage due to charge-sharing with internal capacitance. Error from junction leakage is a function of external
source impedance and input leakage current. In the following expression, expected error in result value due to junction
leakage is expressed in voltage (V
where:
Charge-sharing leakage is a function of input source impedance, conversion rate, change in voltage between successive
conversions, and the size of the filtering capacitor used. Error levels are best determined empirically. In general, continuous
conversion of the same channel may not be compatible with high-source impedance.
of C
I
Off
SAMP
is a function of operating temperature.
in the new design may be reduced.
V
ERRJ
(V
Parameter
Table 22-10. FLASH EEPROM Module Life Characteristics
= R
DDF
Table 22-9. FLASH Program and Erase Characteristics
(V
S
DDF
x I
= 3.135 to 3.465 V, V
Off
Parameter
The FLASH memory characteristics are shown in
Table
PP
= 2.7 to 3.6 V, V
.
Freescale Semiconductor, Inc.
For More Information On This Product,
ERRJ
22-10,
):
Go to: www.freescale.com
Figure
Electrical Specifications
PP
PP
Symbol
= 4.75 to 5.25 V, T
22-2, and
E
P
t
t
t
t
PROG
Erase
E_Off
P_Off
Pulse
Pulse
= 4.75 to 5.25 V, T
(1)
0
1.
Figure
See
Min
See
4.0
4.0
—
8
Retention
Symbol
Table 9-11. Required Erase Algorithm
P/E
Table 9-9. Required Programming
22-1.
A
Algorithm
= T
A
Typ
500
4.8
4.8
= T
8
on page 219.
L
to T
L
to T
on page 213.
f
Table
Value
100
H
)
10
1024 x C
Note 1
H
MMC2107 – Rev. 2.0
Max
(2)
6.0
6.0
)
20
22-9,
SAMP
MOTOROLA
. The value
Cycles
Years
Unit
Unit
—
—
s
s