DF2315VTE25 Renesas Electronics America, DF2315VTE25 Datasheet - Page 696
DF2315VTE25
Manufacturer Part Number
DF2315VTE25
Description
MCU 3V 384K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2315VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2315VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 17 ROM
17.17
There are three kinds of flash memory program/erase protection: hardware protection, software
protection, and error protection.
17.17.1 Hardware Protection
Hardware protection refers to a state in which programming/erasing of flash memory is forcibly
disabled or aborted. Settings in flash memory control registers 1 and 2 (FLMCR1, FLMCR2) and
erase block registers 1 and 2 (EBR1, EBR2) are reset (see table 17.32).
Table 17.32 Hardware Protection
Item
Reset/standby
protection
Rev.7.00 Feb. 14, 2007 page 662 of 1108
REJ09B0089-0700
Flash Memory Protection
Description
•
•
In a reset (including a WDT overflow reset)
and in standby mode, FLMCR1, FLMCR2,
EBR1, and EBR2 are initialized, and the
program/erase-protected state is entered.
In a reset via the RES pin, the reset state is
not entered unless the RES pin is held low
until oscillation stabilizes after powering on.
In the case of a reset during operation, hold
the RES pin low for the RES pulse width
specified in section 20.3.3, AC
Characteristics.
Program
Yes
Functions
Erase
Yes
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