MC9S12XD256VAG Freescale Semiconductor, MC9S12XD256VAG Datasheet - Page 1138

• Manufacturer Part Number: MC9S12XD256VAG
• Description: IC MCU 256K FLASH 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12XD256VAG

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 119
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 14K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 27 512 Kbyte Flash Module (S12XFTX512K4V2)
27.4.2.5
The mass erase operation will erase all addresses in a Flash block using an embedded algorithm.
An example flow to execute the mass erase operation is shown in
write sequence is as follows:
If a Flash block to be erased contains any protected area, the PVIOL flag in the FSTAT register will set and
the mass erase command will not launch. Once the mass erase command has successfully launched, the
CCIF flag in the FSTAT register will set after the mass erase operation has completed unless a new
command write sequence has been buffered.
1140
1. Write to a Flash block address to start the command write sequence for the mass erase command.
2. Write the mass erase command, 0x41, to the FCMD register.
3. Clear the CBEIF flag in the FSTAT register by writing a 1 to CBEIF to launch the mass erase
The address and data written will be ignored. Multiple Flash blocks can be simultaneously mass
erased by writing to the same relative address in each Flash block.
command.
Mass Erase Command
MC9S12XDP512 Data Sheet, Rev. 2.21
Figure
27-30. The mass erase command
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