R5F21226JFP#U0 Renesas Electronics America, R5F21226JFP#U0 Datasheet - Page 472
R5F21226JFP#U0
Manufacturer Part Number
R5F21226JFP#U0
Description
IC R8C/22 MCU FLASH 48LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/22r
Datasheet
1.R5F21237DFPU0.pdf
(551 pages)
Specifications of R5F21226JFP#U0
Core Processor
R8C
Core Size
16/32-Bit
Speed
20MHz
Connectivity
CAN, I²C, LIN, SIO, SSU, UART/USART
Peripherals
POR, Voltage Detect, WDT
Number Of I /o
41
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
For Use With
R0E521237CPE00 - EMULATOR COMPACT R8C/20/21/22/23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F21226JFP#U0R5F21226JFP#U1
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
R5F21226JFP#U0R5F21226JFP#V0
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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R8C/22 Group, R8C/23 Group
Rev.2.00 Aug 20, 2008
REJ09B0251-0200
Table 21.5
NOTES:
−
−
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Minimum endurance to guarantee all electrical characteristics after program and erase (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
5. In a system that executes multiple programming operations, the actual erasure endurance can be reduced by writing to
6. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 125 ° C for K version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times.
For example, if 1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is
erased, the programming/erasure endurance still stands at one. However, the same address must not be programmed more
than once per erase operation (overwriting prohibited).
are the same as that in program ROM.
sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation. For
example, when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to
128 groups before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B
can further reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block
and limit the number of erase operations to a certain number.
least three times until the erase error does not occur.
CC
Program/erase endurance
Byte program time
(Program/erase endurance ≤ 1,000 times)
Byte program time
(Program/erase endurance > 1,000 times)
Block erase time
(Program/erase endurance ≤ 1,000 times)
Block erase time
(Program/erase endurance > 1,000 times)
Time delay from suspend request until
erase suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
= 2.7 to 5.5 V at Topr = -40 to 85 ° C (D, J version) / -40 to 125 ° C (K version), unless otherwise specified.
Flash Memory (Data Flash Block A, Block B) Electrical Characteristics
(9)
Parameter
Page 450 of 501
(2)
Ambient temperature = 55 ° C
Conditions
10,000
Min.
650
2.7
2.7
-40
20
−
−
−
−
−
0
−
(3)
21. Electrical Characteristics
Typ.
0.2
0.3
Standard
50
65
−
−
−
−
−
−
−
−
−
97 + CPU clock
3 + CPU clock
×
×
(4)
Max.
6 cycle
4 cycle
85
400
5.5
5.5
−
−
9
−
−
−
−
(8)
times
year
Unit
µ s
µ s
µ s
µ s
ns
µ s
° C
V
V
s
s
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