LF412CN/NOPB National Semiconductor, LF412CN/NOPB Datasheet - Page 2

• Manufacturer Part Number: LF412CN/NOPB
• Description: IC OP AMP DUAL LOW JFET IN 8-DIP
• Manufacturer: National Semiconductor
• Series: BI-FET II™r

Specifications of LF412CN/NOPB

• Amplifier Type: J-FET
• Number Of Circuits: 2
• Slew Rate: 15 V/µs
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 50pA
• Voltage - Input Offset: 1000µV
• Current - Supply: 3.6mA
• Voltage - Supply, Single/dual (±): 10 V ~ 36 V, ±5 V ~ 18 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Bandwidth: 4 MHz
• Channel Separation: -120
• Common Mode Rejection Ratio: 100
• Current, Input Bias: 50 pA
• Current, Input Offset: 25 pA
• Current, Output: 25 mA
• Current, Supply: 3.6 mA
• Harmonic Distortion: 0.02 %
• Impedance, Thermal: 115 °C/W
• Number Of Amplifiers: Dual
• Package Type: DIP-8
• Power Dissipation: 670 mW
• Resistance, Input: 10^12 Ohms
• Temperature, Operating, Range: 0 to +70 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: 10 to 45 V
• Voltage, Noise: 25 nV/sqrt Hz
• Voltage, Offset: 1 mV
• Voltage, Output, High: 13.5 V
• Voltage, Output, Low: -13.5 V
• Voltage, Supply: ±15 V
• Number Of Channels: 2
• Voltage Gain Db: 106.02 dB
• Common Mode Rejection Ratio (min): 70 dB
• Input Voltage Range (max): 45 V
• Input Voltage Range (min): 10 V
• Input Offset Voltage: 3 mV at +/- 15 V
• Supply Current: 6.5 mA at +/- 15 V
• Maximum Power Dissipation: 670 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LF412CN; *LF412CN/NOPB; LF412; LF412CN

V
∆V
I
I
R
A
V
V
CMRR
PSRR
I
SR
GBW
OS
B
S
Symbol
Symbol
OS
IN
VOL
O
CM
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 11)
DC Electrical Characteristics
(Note 7)
Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
AC Electrical Characteristics
(Note 7)
OS
Supply Voltage
Differential Input Voltage
Input voltage Range
Output Short Circuit
Power Dissipation
(Note 3)
Duration (Note 4)
/∆T
Amplifier to Amplifier
Coupling
Slew Rate
Gain-Bandwidth Product
Input Offset Voltage
Average TC of Input
Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage
Gain
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
Parameter
Parameter
H Package
Continuous
LF412A
±
±
±
R
R
V
(Notes 7, 9)
V
(Notes 7, 9)
T
V
R
Over Temperature
V
R
(Note 10)
V
S
S
j
S
S
O
22V
38V
19V
S
S
L
S
=25˚C
T
(Input Referred)
V
V
=2k, T
=
=
=
=
=10 kΩ, T
=10 kΩ (Note 8)
≤10k
= 0V, R
A
S
S
±
±
±
±
=25˚C, f=1 Hz-20 kHz
=
=
15V
15V
15V, V
15V, R
±
±
15V, T
15V, T
N Package
A
=25˚C
Conditions
Continuous
(Note 2)
L
Conditions
O
L
A
=
LF412
=10k
±
±
±
=
=25˚C
A
A
18V
30V
15V
±
∞
=25˚C
=25˚C
10V,
T
T
T
T
T
j
j
T
j
j
j
=25˚C
=70˚C
=25˚C
=70˚C
=125˚C
j
=125˚C
3
T
θ
Operating Temp. Range
Storage Temp.
Lead Temp.
ESD Tolerance
Min
10
jA
j
3
(Note 12)
Range
(Soldering, 10 sec.)
(Note 13)
max
(Typical)
Min
±
±
50
25
80
80
12
16
LF412A
−120
Typ
15
4
LF412A
±
+19.5
−16.5
10
Typ
200
200
100
100
0.5
3.6
25
50
13.5
7
12
Max
Max
100
200
1.0
5.6
−65˚C≤T
10
25
50
2
4
Min
2.7
H Package
8
152˚C/W
(Note 5)
(Note 6)
1700V
150˚C
260˚C
Min
±
±
25
15
70
70
12
11
A
LF412
≤150˚C −65˚C≤T
−120
Typ
15
4
LF412
±
+14.5
−11.5
10
Typ
200
200
100
100
1.0
3.6
25
50
13.5
7
12
Max
N Package
115˚C/W
670 mW
(Note 6)
1700V
Max
115˚C
260˚C
100
200
3.0
6.5
20
25
50
2
4
A
≤150˚C
Units
MHz
V/µs
dB
µV/˚C
Units
V/mV
V/mV
mV
mA
pA
nA
nA
pA
nA
nA
dB
dB
Ω
V
V
V