LF412CN/NOPB National Semiconductor, LF412CN/NOPB Datasheet - Page 2
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LF412CN/NOPB
Manufacturer Part Number
LF412CN/NOPB
Description
IC OP AMP DUAL LOW JFET IN 8-DIP
Manufacturer
National Semiconductor
Series
BI-FET II™r
Specifications of LF412CN/NOPB
Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
15 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
50pA
Voltage - Input Offset
1000µV
Current - Supply
3.6mA
Voltage - Supply, Single/dual (±)
10 V ~ 36 V, ±5 V ~ 18 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Bandwidth
4 MHz
Channel Separation
-120
Common Mode Rejection Ratio
100
Current, Input Bias
50 pA
Current, Input Offset
25 pA
Current, Output
25 mA
Current, Supply
3.6 mA
Harmonic Distortion
0.02 %
Impedance, Thermal
115 °C/W
Number Of Amplifiers
Dual
Package Type
DIP-8
Power Dissipation
670 mW
Resistance, Input
10^12 Ohms
Temperature, Operating, Range
0 to +70 °C
Voltage, Gain
200 V/mV
Voltage, Input
10 to 45 V
Voltage, Noise
25 nV/sqrt Hz
Voltage, Offset
1 mV
Voltage, Output, High
13.5 V
Voltage, Output, Low
-13.5 V
Voltage, Supply
±15 V
Number Of Channels
2
Voltage Gain Db
106.02 dB
Common Mode Rejection Ratio (min)
70 dB
Input Voltage Range (max)
45 V
Input Voltage Range (min)
10 V
Input Offset Voltage
3 mV at +/- 15 V
Supply Current
6.5 mA at +/- 15 V
Maximum Power Dissipation
670 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Maximum Dual Supply Voltage
+/- 18 V
Minimum Operating Temperature
0 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
Current - Output / Channel
-
-3db Bandwidth
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*LF412CN
*LF412CN/NOPB
LF412
LF412CN
*LF412CN/NOPB
LF412
LF412CN
V
∆V
I
I
R
A
V
V
CMRR
PSRR
I
SR
GBW
OS
B
S
Symbol
Symbol
OS
IN
VOL
O
CM
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 11)
DC Electrical Characteristics
(Note 7)
Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
AC Electrical Characteristics
(Note 7)
OS
Supply Voltage
Differential Input Voltage
Input voltage Range
Output Short Circuit
Power Dissipation
(Note 3)
Duration (Note 4)
/∆T
Amplifier to Amplifier
Coupling
Slew Rate
Gain-Bandwidth Product
Input Offset Voltage
Average TC of Input
Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage
Gain
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
Parameter
Parameter
H Package
Continuous
LF412A
±
±
±
R
R
V
(Notes 7, 9)
V
(Notes 7, 9)
T
V
R
Over Temperature
V
R
(Note 10)
V
S
S
j
S
S
O
22V
38V
19V
S
S
L
S
=25˚C
T
(Input Referred)
V
V
=2k, T
=
=
=
=
=10 kΩ, T
=10 kΩ (Note 8)
≤10k
= 0V, R
A
S
S
±
±
±
±
=25˚C, f=1 Hz-20 kHz
=
=
15V
15V
15V, V
15V, R
±
±
15V, T
15V, T
N Package
A
=25˚C
Conditions
Continuous
(Note 2)
L
Conditions
O
L
A
=
LF412
=10k
±
±
±
=
=25˚C
A
A
18V
30V
15V
±
∞
=25˚C
=25˚C
10V,
T
T
T
T
T
j
j
T
j
j
j
=25˚C
=70˚C
=25˚C
=70˚C
=125˚C
j
=125˚C
3
T
θ
Operating Temp. Range
Storage Temp.
Lead Temp.
ESD Tolerance
Min
10
jA
j
3
(Note 12)
Range
(Soldering, 10 sec.)
(Note 13)
max
(Typical)
Min
±
±
50
25
80
80
12
16
LF412A
−120
Typ
15
4
LF412A
±
+19.5
−16.5
10
Typ
200
200
100
100
0.5
3.6
25
50
13.5
7
12
Max
Max
100
200
1.0
5.6
−65˚C≤T
10
25
50
2
4
Min
2.7
H Package
8
152˚C/W
(Note 5)
(Note 6)
1700V
150˚C
260˚C
Min
±
±
25
15
70
70
12
11
A
LF412
≤150˚C −65˚C≤T
−120
Typ
15
4
LF412
±
+14.5
−11.5
10
Typ
200
200
100
100
1.0
3.6
25
50
13.5
7
12
Max
N Package
115˚C/W
670 mW
(Note 6)
1700V
Max
115˚C
260˚C
100
200
3.0
6.5
20
25
50
2
4
A
≤150˚C
Units
MHz
V/µs
dB
µV/˚C
Units
V/mV
V/mV
mV
mA
pA
nA
nA
pA
nA
nA
dB
dB
Ω
V
V
V