MMT08B064T3 ON Semiconductor, MMT08B064T3 Datasheet
MMT08B064T3
Specifications of MMT08B064T3
Available stocks
Related parts for MMT08B064T3
MMT08B064T3 Summary of contents
Page 1
... High Surge Current Capability: 80 Amps 10 x 1000 msec, for Controlled Temperature Environments • The MMT08B064T3 is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. • Bidirectional Protection in a Single Device • ...
Page 2
... V Breakdown Voltage BR V Breakover Voltage BO I Breakover Current BO I Holding Current State Voltage TM MMT08B064T3 (T = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply 1.0 kW 25°C) J Voltage Current Characteristic of TSPD (Bidirectional Device) http://onsemi.com 2 Symbol Max T − 125 ...
Page 3
... Figure 3. Maximum Breakover Voltage versus Temperature t = rise time to peak value decay time to half value f Peak 100 Value Half Value TIME (ms) Figure 5. Exponential Decay Pulse Waveform MMT08B064T3 100 120 140 −60 −40 −20 Figure 2. Typical Breakdown Voltage versus 700 600 500 400 ...
Page 4
... MMT08B064T3 TIP OUTSIDE PLANT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE GND PLANT RING HEAT COIL http://onsemi.com GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT TELECOM EQUIPMENT 4 ...
Page 5
... H 0.0020 0.0060 0.051 0.152 J 0.006 0.012 0.15 0.30 K 0.030 0.050 0.76 1.27 P 0.020 REF 0.51 REF S 0.205 0.220 5.21 5.59 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMT08B064T3/D ...