STP5N52K3 STMicroelectronics, STP5N52K3 Datasheet - Page 5
![MOSFET N-CH 525V 4.4A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP5N52K3
Manufacturer Part Number
STP5N52K3
Description
MOSFET N-CH 525V 4.4A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Specifications of STP5N52K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
525V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 100V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohms
Drain-source Breakdown Voltage
525 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
4.4 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10652-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP5N52K3
Manufacturer:
STMicroelectronics
Quantity:
500
STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
I
BV
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
SD
t
t
t
t
GSO
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Gate-source breakdown
voltage
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 16952 Rev 1
Igs=± 1 mA (open drain)
V
R
(see Figure 2)
I
I
V
(see Figure 4)
I
V
(see Figure 4)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 4.4 A, V
= 4.4 A, di/dt = 100 A/µs
= 4.4 A, di/dt = 100 A/µs
= 260 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
Test conditions
J
GS
D
GS
= 150 °C
= 4.4 A,
= 10 V
= 0
Electrical characteristics
Min.
Min.
Min. Typ. Max Unit
30
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
-
17.6
Max Unit
Max. Unit
4.4
1.5
-
-
µC
µC
ns
ns
ns
ns
ns
ns
5/13
A
A
V
A
A
V