SI8465DB-T2-E1 Vishay, SI8465DB-T2-E1 Datasheet - Page 3

• Manufacturer Part Number: SI8465DB-T2-E1
• Description: MOSFET P-CH D-S 20V MICROFOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8465DB-T2-E1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 780mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 104mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3.8 A
• Power Dissipation: 1.8 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Details
• Other names: SI8465DB-T2-E1TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
0.25
0.20
0.15
0.10
0.05
15
12
10
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 1 A
0.5
V
3
V
DS
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
= 5 V
g
1.0
I
- Total Gate Charge (nC)
D
4
- Drain Current (A)
Gate Charge
V
6
DS
= 10 V
1.5
V
GS
V
GS
= 2.5 V
9
= 5 V thru 3 V
2.0
8
V
V
V
V
DS
GS
GS
V
GS
GS
= 16 V
12
= 2 V
= 4.5 V
= 1.5 V
2.5
= 2.5 V
3.0
12
15
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
800
600
400
200
5
4
3
2
1
0
0
- 50
0.0
0
I
C
D
On-Resistance vs. Junction Temperature
C
rss
= 1.5 A
C
oss
- 25
iss
0.5
V
V
4
Transfer Characteristics
DS
T
GS
J
0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
Capacitance
C
V
25
= - 55 °C
1.0
GS
T
8
C
= 2.5 V
= 25 °C
T
C
50
= 125 °C
Vishay Siliconix
V
GS
1.5
12
75
= 4.5 V
Si8465DB
100
www.vishay.com
2.0
16
125
2.5
20
150
3