SI8465DB-T2-E1 Vishay, SI8465DB-T2-E1 Datasheet - Page 7

• Manufacturer Part Number: SI8465DB-T2-E1
• Description: MOSFET P-CH D-S 20V MICROFOOT
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8465DB-T2-E1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 10V
• Power - Max: 780mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 104mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3.8 A
• Power Dissipation: 1.8 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Details
• Other names: SI8465DB-T2-E1TR

PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH)
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 mm to 0.32 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. • is location of pin 1.
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65363.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
Dim.
A
A
A
b
D
e
s
1
2
0.462
0.220
0.242
0.300
0.230
0.920
Min.
Mark on Backside of Die
Recommended Land
2
1
8465
X X X
4 x Ø 0.24 to 0.26 Note 4
Solder Mask ~ Ø 0.25
Millimeters
Nom.
0.505
0.250
0.255
0.310
0.500
0.250
0.960
4
3
a
4 x Ø b
0.548
0.280
0.268
0.320
0.270
1.000
Max.
s
S
D
D
e
Bump Note 2
0.0181
0.0086
0.0095
0.0118
0.0090
0.0362
Min.
G
S
Inches
0.0198
0.0098
0.0100
0.0122
0.0197
0.0098
0.0378
Nom.
Vishay Siliconix
Si8465DB
www.vishay.com
0.0215
0.0110
0.0105
0.0126
0.0106
0.0394
Max.
7