SI6467BDQ-T1-GE3 Vishay, SI6467BDQ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI6467BDQ-T1-GE3
• Description: MOSFET P-CH G-S 1.8V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6467BDQ-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 850mV @ 450µA
• Gate Charge (qg) @ Vgs: 70nC @ 4.5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -850mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6467BDQ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72087
S-80682-Rev. D, 31-Mar-08
0.030
0.024
0.018
0.012
0.006
0.000
0.1
30
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 8 A
0.2
On-Resistance vs. Drain Current
= 6 V
12
V
V
6
GS
T
SD
J
Q
= 1.8 V
= 150 °C
- Source-to-Drain Voltage (V)
0.4
g
I
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
24
12
0.6
36
T
18
J
0.8
= 25 °C
V
V
GS
GS
48
= 2.5 V
= 4.5 V
24
1.0
1.2
60
30
6000
5000
4000
3000
2000
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
1
= 8 A
2
C
= 4.5 V
rss
T
V
V
0
2
J
GS
C
DS
- Junction Temperature (°C)
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
4
2 5
Capacitance
3
I
D
5 0
= 8 A
4
Vishay Siliconix
6
Si6467BDQ
7 5
5
C
8
iss
www.vishay.com
100
6
10
125
7
150
12
8
3