FDMS86252 Fairchild Semiconductor, FDMS86252 Datasheet - Page 3

• Manufacturer Part Number: FDMS86252
• Description: MOSFET N-CH 150V 16A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS86252

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 905pF @ 75V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 51 mOhms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 69 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS86252TR

©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C
Typical Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
15
10
20
15
10
Figure 3. Normalized On Resistance
5
0
5
0
Figure 1.
-75
2
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
= 4.6 A
vs Junction Temperature
= 5 V
= 10 V
T
V
V
1
-25
J
GS
DS
On Region Characteristics
,
3
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
,
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
GS
GS
GS
0
= 10 V
= 5.5 V
= 6 V
T
2
J
= 150
25
μ
s
4
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
50
C
T
J
3
= 25 °C unless otherwise noted
V
V
GS
GS
75
= 5 V
= 4.5 V
T
J
5
o
100 125 150
C )
= -55
T
4
J
= 25
o
C
o
μ
C
s
6
5
3
0.001
200
150
100
0.01
50
0.1
20
10
0
5
4
3
2
1
0
Figure 2.
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
V
= 0 V
GS
0.2
SD
5
T
Normalized On-Resistance
V
, BODY DIODE FORWARD VOLTAGE (V)
= 4.5 V
On-Resistance vs Gate to
J
GS
= 150
I
Source Voltage
5
D
Source to Drain Diode
I
,
D
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
= 4.6 A
0.4
6
o
C
V
10
0.6
GS
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
= 5 V
T
V
J
J
GS
= 125
= 25
= 6 V
V
0.8
8
GS
o
T
o
C
C
J
= 5.5 V
= -55
15
T
www.fairchildsemi.com
J
V
= 25
GS
1.0
o
9
C
= 10 V
o
C
μ
μ
s
s
10
20
1.2