FDMS86252 Fairchild Semiconductor, FDMS86252 Datasheet - Page 4

• Manufacturer Part Number: FDMS86252
• Description: MOSFET N-CH 150V 16A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS86252

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 905pF @ 75V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 51 mOhms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 69 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS86252TR

©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C
Typical Characteristics
0.001
20
10
0.01
10
0.001
1
0.1
8
6
4
2
0
Figure 7.
50
10
1
0
0.01
I
Figure 9.
D
Figure 11. Forward Bias Safe
= 4.6 A
THIS AREA IS
LIMITED BY r
Switching Capability
0.01
V
0.1
Gate Charge Characteristics
t
AV
DS
V
3
DD
Operating Area
, TIME IN AVALANCHE (ms)
, DRAIN to SOURCE VOLTAGE (V)
Unclamped Inductive
Q
= 50 V
g
, GATE CHARGE (nC)
V
DS(on)
SINGLE PULSE
T
R
T
DD
J
A
θ
JA
= MAX RATED
= 25
T
= 75 V
1
J
= 125
0.1
= 125
6
o
T
C
J
o
= 25
C/W
T
o
C
J
V
10
DD
= 25 °C unless otherwise noted
o
C
T
= 100 V
J
= 100
1
9
o
100
C
100
1 ms
10 ms
100 ms
1 s
10 s
DC
10
μ
12
s
800
4
2000
1000
1000
100
100
25
20
15
10
0.5
10
10
5
0
Figure 10.
25
1
3
0.1
10
Figure 12.
Limited by Package
-4
Figure 8.
SINGLE PULSE
R
T
f = 1 MHz
V
Current vs Case Temperature
A
GS
θ
JA
= 25
10
= 0 V
= 125
-3
V
50
o
DS
C
Maximum Continuous Drain
Power Dissipation
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
o
C
C/W
10
,
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
-2
1
75
10
-1
R
θ
JC
= 1.8
100
1
V
o
GS
10
C/W
= 6 V
10
o
C )
125
V
V
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GS
GS
100
C
= 10 V
C
C
= 10 V
oss
iss
rss
150
1000
100