FDMS2506SDC Fairchild Semiconductor, FDMS2506SDC Datasheet - Page 7
![MOSFET N-CH 25V DUAL POWER56](/photos/37/61/376185/power56_sml.jpg)
FDMS2506SDC
Manufacturer Part Number
FDMS2506SDC
Description
MOSFET N-CH 25V DUAL POWER56
Manufacturer
Fairchild Semiconductor
Series
Dual Cool™, PowerTrench®, SyncFET™r
Datasheet
1.FDMS2506SDC.pdf
(9 pages)
Specifications of FDMS2506SDC
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.45 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
93nC @ 10V
Input Capacitance (ciss) @ Vds
5945pF @ 13V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.45 mOhms
Forward Transconductance Gfs (max / Min)
171 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
49 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS2506SDCTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS2506SDC
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2506SDC.
diode reverse recovery characteristic
35
30
25
20
15
10
Figure 14. FDMS2506SDC SyncFET body
-5
5
0
0
50
100
TIME (ns)
di/dt = 300 A/
150
(continued)
μ
s
200
250
7
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 125
= 100
= 25
o
o
o
C
C
C
15
20
www.fairchildsemi.com
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