STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 6
![MOSFET N-CH 620V 3.8A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP4N62K3
Manufacturer Part Number
STP4N62K3
Description
MOSFET N-CH 620V 3.8A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Specifications of STP4N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.95 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 50V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.95 Ohms
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
3 V
Continuous Drain Current
3.8 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10651-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP4N62K3
Manufacturer:
STMicroelectronics
Quantity:
800
Test circuits
3
6/14
Figure 2.
Figure 4.
Figure 6.
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Switching times test circuit for
resistive load
switching and diode recovery times
Unclamped inductive waveform
Test circuit for inductive load
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 17548 Rev 1
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 3.
Figure 5.
Figure 7.
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
Gate charge test circuit
Unclamped Inductive load test
circuit
Switching time waveform
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
STB/F/I/P4N62K3
td
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD