MC68908GZ8MFAE Freescale Semiconductor, MC68908GZ8MFAE Datasheet - Page 39

• Manufacturer Part Number: MC68908GZ8MFAE
• Description: IC MCU 8BIT 8K FLASH 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68908GZ8MFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: CAN, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-LQFP
• Processor Series: M689xx
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SPI, SCI, CAN
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05AE, DEMO908GZ60E, M68EML08GZE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 16 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

The address ranges for the user memory and vectors are:
Programming tools are available from Freescale Semiconductor. Contact your local representative for
more information.
2.6.2 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or copying the FLASH difficult for
Freescale Semiconductor
unauthorized users.
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•
•
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This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16-Kbyte FLASH array for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = PAGE erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
$C000–$FDFF; user memory
$FE08
$FF7E; FLASH block protect register
$FFD4–$FFFF; these locations are reserved for user-defined interrupt and reset vectors
;
Address:
FLASH control register
Reset:
Read:
Write:
A security feature prevents viewing of the FLASH contents.
$FE08
Bit 7
0
0
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
5
0
0
NOTE
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
(1)
FLASH Memory (FLASH)
PGM
Bit 0
0
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