MGA-633P8, MGA-634P8 and MGA-635P8
Low Noise, High Linearity Low Noise Amplifier
Reliability Data Sheet
Description
This document describes the reliability performance of
MGA-63xP8 series of devices based on a series of reliabil-
ity tests conducted.
Avago Technologies’ MGA-63xP8 series is an economical,
easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The
LNA has low noise and high linearity achieved through
the use of Avago Technologies’ proprietary 0.25µm GaAs
Enhancement-mode pHEMT process. This MGA63xP8
series of devices are designed for optimum use over a
different range of frequencies, i.e. 450MHz-1.5GHz for
MGA-633P8,and 1.5GHz -2.3GHz for MGA-634P8. These
devices are housed in a standard QFN package where
the packaging reliability performance has been tested
reliable based on representative product in 8pin QFN
2x2X0.75mm package.
The reliability performance of MGA-634P8 was leveraged
on MGA-633P8 based on same wafer fabrication process
and design.
Table 1. Life prediction:
Demonstrated Performance
Table 2. Estimated for Various Channel Temperatures are as follows:
1. Point MTTF is simply the total device hours divided by the number of failures. However, in cases for which no failures are observed, the point
Test Name
Channel
Temp. (°C)
150
125
100
85
High Temperature Operating Life
estimate is calculated under the assumption that one unit failed.
Point Typical Performance
MTTF hours
9.04x10
2.09x10
7.05x10
7.36x10
4
6
7
8
[1]
Stress Test
Condition
T
DC Bias
90% Confidence
MTTF hours
4.07x10
9.07x10
3.06x10
3.19x10
j
= 150°C
4
5
7
8
Reliability Prediction Model
Failure rate predictions are based on HTOL test results.
The prediction uses an exponential cumulative failure
function (constant failure rate) as the reliability predic-
tion model to predict failure rate and mean time to failure
(MTTF) at various temperatures as shown in Table 2. The
wear out mechanisms is therefore not considered. The
Arrhenius temperature de-rating equation is used. Avago
Technologies assumes no failure mechanism change
between stresses and use conditions. Bias and tempera-
ture are alterable stresses and must be considered with the
thermal resistance of the devices when determining the
stress condition. The failure rate will have a direct relation-
ship to the life stress. Using bare PHEMT die, the process
was tested to determine activation energy of 1.8eV.
Confidence intervals are based upon the chi-squared pre-
diction method associated with exponential distribution.
Total Units
Tested
94
Point Typical
Performance FIT
10638.29
478.33
14.19
1.36
Total Device
Hours
94000
90% Confidence
FIT
24521.3
1102.6
32.7
3.1
No. of Failed
Units
0