SD1053C18S20L Vishay, SD1053C18S20L Datasheet - Page 2

• Manufacturer Part Number: SD1053C18S20L
• Description: DIODE FAST REC 1800V 1050A B-PUK
• Manufacturer: Vishay

Specifications of SD1053C18S20L

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.9V @ 1500A
• Current - Reverse Leakage @ Vr: 50mA @ 1800V
• Current - Average Rectified (io) (per Diode): 1050A
• Voltage - Dc Reverse (vr) (max): 1800V (1.8kV)
• Reverse Recovery Time (trr): 2µs
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: Single
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1800 V
• Forward Voltage Drop: 1.9 V
• Recovery Time: 2000 ns
• Forward Continuous Current: 1050 A
• Max Surge Current: 15700 A
• Reverse Current Ir: 50000 uA
• Mounting Style: Screw
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Repetitive Reverse Voltage Vrrm Max: 1.8kV
• Forward Current If(av): 1.05kA
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 2µs
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *SD1053C18S20L

SD1053C..L Series
Vishay High Power Products
www.vishay.com
2
CODE
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
RECOVERY CHARACTERISTICS
S20
S30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
case junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
MAXIMUM VALUE
2
2
t
t for fusing
√t for fusing
rr
AT T
AT 25 % I
(µs)
J
2.0
3.0
= 25 °C
RRM
SQUARE
PULSE
1000
(A)
I
pk
TEST CONDITIONS
SYMBOL
For technical questions, contact: [e-mail]
V
V
I
F(RMS)
I
I
F(TO)1
F(TO)2
V
F(AV)
I
FSM
I
2
r
r
2
FM
f1
f2
√t
t
SYMBOL
(A/µs)
T
dI/dt
R
100
J
, T
thJ-hs
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
t
(Hockey PUK Version),
Fast Recovery Diodes
pk
p
Stg
= 10 ms sinusoidal wave
= 1500 A, T
- 50
(V)
V
F(AV)
F(AV)
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
920/1050 A
r
), T
), T
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
F(AV)
F(AV)
J
TEST CONDITIONS
J
J
= T
t
= T
= T
rr
< I < π x I
< I < π x I
J
AT 25 % I
TEST CONDITIONS
J
J
maximum,
RRM
RRM
maximum
maximum
(µs)
4.0
4.5
TYPICAL VALUES
AT T
F(AV)
F(AV)
Sinusoidal half wave,
initial T
RRM
J
), T
), T
= 150 °C
J
J
J
= T
= T
= T
(µC)
400
550
Q
J
J
J
rr
maximum
maximum
maximum
180
230
(A)
I
rr
1050 (450) 920 (390)
55 (85)
15 000
15 700
12 620
13 210
11 250
1940
1125
1027
- 40 to 150
1.34
1.48
0.37
0.33
1.90
S20
796
727
VALUES
SD1053C..L
14 700
(1500)
0.073
0.031
Document Number: 93167
DO-200AB (B-PUK)
255
I
FM
dir
dt
Revision: 14-May-08
55 (85)
13 000
13 610
10 930
11 450
1700
8450
1.51
1.67
0.50
0.45
2.26
S30
845
772
598
546
t
rr
UNITS
I
RM(REC)
K/W
(kg)
°C
N
UNITS
g
kA
kA
mΩ
Q
°C
A
A
V
V
rr
2
2
s
√s
t