MITB10WB1200TMH IXYS, MITB10WB1200TMH Datasheet - Page 6

• Manufacturer Part Number: MITB10WB1200TMH
• Description: MODULE IGBT CBI
• Manufacturer: IXYS

Specifications of MITB10WB1200TMH

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 10A
• Current - Collector (ic) (max): 17A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 70W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 61
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 2.1
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 17
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 12
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.9
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 12
• Rthjc, Typ, Br Chopper, (k/w): 1.9
• Package Style: MiniPack 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
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Typical output characteristics, V
Typical transfer characteristics
0.4
6
25 °C
125 °C
25 °C
125 °C
0.8
7
1.2
8
Vce [V]
Vge [V]
1.6
9
2.0
10
GE
2.4
11
= 15 V
Advanced Technical Information
2.8
12
3.2
13
3.6
14
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12
10
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0
8
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0
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Typical forward characteristics of freewheeling diode
Typical output characteristics (125°C)
0.5
25 °C
125 °C
Vge= 19V
Vge= 17V
Vge= 15V
Vge= 13V
Vge= 11V
Vge= 9V
1.0
1.5
MITB10WB1200TMH
Vce [V]
Vf [V]
2.0
2.5
3.0
3.5
20100906b
4.0
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