APTC60TDUM35PG Microsemi Power Products Group, APTC60TDUM35PG Datasheet

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APTC60TDUM35PG

Manufacturer Part Number
APTC60TDUM35PG
Description
MOSFET MOD TRIPLE DUAL SRC SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTC60TDUM35PG

Fet Type
6 N-Channel (3-Phase Leg)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 72A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
3.9V @ 5.4mA
Gate Charge (qg) @ Vgs
518nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 25V
Power - Max
416W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
G1
S1
S2
G2
R
V
D1
D2
V
E
E
I
I
Super Junction MOSFET
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
Triple dual Common Source
S1/S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
D 1
D 2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Power Module
S1/S2
G1
S1
S2
G2
G3
S3
S4
G4
D3
D4
S3/S4
D 3
D 4
Parameter
G3
S3
S4
G4
S3/S 4
S5/S6
D 5
G5
S5
S6
G6
D 6
D5
D6
G5
S5
S6
G6
www.microsemi.com
S5/ S6
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 72A @ Tc = 25°C
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
-
-
-
-
-
APTC60TDUM35PG
= 600V
-
-
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
= 35mΩ max @ Tj = 25°C
Symmetrical design
Lead frames for power connections
Max ratings
1800
600
200
±20
416
72
54
35
20
1
DSon
Unit
mΩ
mJ
W
V
A
V
A
1 - 6

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APTC60TDUM35PG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC60TDUM35PG V = 600V DSS R = 35mΩ max @ Tj = 25°C DSon I = 72A @ Tc = 25°C D Application • ...

Page 2

... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 72A di/dt ≤ 200A/µ APTC60TDUM35PG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125°C ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC60TDUM35PG To heatsink M6 www.microsemi.com Min Typ Max Unit 0.3 °C/W 2500 V -40 150 ° ...

Page 4

... V , Drain to Source Voltage ( (on) vs Drain Current DS 1.1 Normalized to V =10V @ 36A GS 1.05 1 0.95 0 Drain Current (A) D APTC60TDUM35PG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 280 V 240 250µs pulse test @ < 0.5 duty cycle 6.5V 200 6V 160 5.5V 120 Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Coss 1000 100 Drain to Source Voltage (V) DS APTC60TDUM35PG ON resistance vs Temperature 3.0 V =10V GS 2 72A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 100 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC60TDUM35PG 120 V ...

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