APTC60TAM35PG Microsemi Power Products Group, APTC60TAM35PG Datasheet

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APTC60TAM35PG

Manufacturer Part Number
APTC60TAM35PG
Description
MOSFET PWR MOD 3PHASE LEG SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTC60TAM35PG

Fet Type
6 N-Channel (3-Phase Leg)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 72A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
3.9V @ 5.4mA
Gate Charge (qg) @ Vgs
518nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 25V
Power - Max
416W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
VBUS1
G1
S1
G2
S2
R
V
0/VBUS1
V
E
E
I
I
Super Junction MOSFET
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
0/VBUS 1
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Triple phase leg
VBUS 1
Power Module
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
U
U
G1
G2
S1
S2
0/VBUS2
VBUS2
G3
S3
G4
S4
0/VBUS 2
VBUS 2
V
Parameter
G3
S3
S4
G4
V
0/VBUS 3
VBUS3
G5
S5
G6
S6
0/VBUS3
VBUS 3
W
G5
G6
S5
S6
W
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 72A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
RoHS Compliant
-
-
-
-
-
= 600V
-
-
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
= 35mΩ max @ Tj = 25°C
APTC60TAM35PG
Symmetrical design
Lead frames for power connections
Max ratings
1800
600
200
±20
416
72
54
35
20
1
DSon
Unit
mΩ
mJ
W
V
A
V
A
1 - 6

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APTC60TAM35PG Summary of contents

Page 1

... Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APTC60TAM35PG V = 600V DSS R = 35mΩ max @ Tj = 25°C DSon I = 72A @ Tc = 25°C D Application • ...

Page 2

... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 72A di/dt ≤ 200A/µ APTC60TAM35PG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125°C ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC60TAM35PG Min 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0.3 ° ...

Page 4

... V , Drain to Source Voltage ( (on) vs Drain Current DS 1.1 Normalized to V =10V @ 36A GS 1.05 1 0.95 0 Drain Current (A) D APTC60TAM35PG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 280 V 240 250µs pulse test @ < 0.5 duty cycle 6.5V 200 6V 160 5.5V 120 Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Coss 1000 100 Drain to Source Voltage (V) DS APTC60TAM35PG ON resistance vs Temperature 3.0 V =10V GS 2 72A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 100 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC60TAM35PG 120 V ...

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