GP1S196HCZSF Sharp Microelectronics, GP1S196HCZSF Datasheet - Page 7
GP1S196HCZSF
Manufacturer Part Number
GP1S196HCZSF
Description
SENSOR OPTO SLOT 1.1MM TRANS SMD
Manufacturer
Sharp Microelectronics
Type
Unamplifiedr
Datasheet
1.GP1S196HCZ0F.pdf
(11 pages)
Specifications of GP1S196HCZSF
Sensing Distance
0.043" (1.1mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
30mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
35V
Response Time
50µs, 50µs
Mounting Type
Surface Mount, Gull Wing
Package / Case
4-SMD
Operating Temperature
-25°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-2510-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GP1S196HCZSF
Manufacturer:
AVAGO
Quantity:
2 805
● Parts
• Photodetector (qty. : 1)
• Photo emitter (qty. : 1)
• Material
Phototransistor
This product is assembled using the below parts.
sulfi de resin (UL94 V-0)
Infrared emitting diode
Black polyphernylene
Category
(non-coherent)
Category
Case
Silicon (Si)
Material
Gallium arsenide (GaAs)
Maximum Sensitivity
Material
Lead frame
42Alloy
wavelength (nm)
930
7
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
SnCu plating
700 to 1 200
950
Sensitivity
GP1S196HCZ0F/GP1S196HCZSF
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A01001EN
0.3
20