GP1S39 Sharp Microelectronics, GP1S39 Datasheet
GP1S39
Specifications of GP1S39
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GP1S39 Summary of contents
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... Unit : mm ) Internal connection diagram PT1 PT2 2 3 4.5 4.0 ( C0.4 ) 1.5 1 Rest of gate ( 0.2 0.4 0.15 - 0.1 1.27 3. B-B' section ( refer Soldering area GP1S39 1 Anode 2 Cathode 3 Emitter2 4 Emitter1 5 Collector 1.27 A-A' section Slit width of emitter side ( 0.8 ) ...
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... V ) MIN. TYP 4mA 130 - F = 4mA 0. 100 Ambient Temperature 120 P tot 100 ˚C ) Ambient temperature T a Forward Current 1 25˚C a 0.8 0.6 0.4 0 Forward current I F GP1S39 ( Ta = 25˚C ) MAX. Unit 1 100 nA 520 A 1.5 - 0.4 V 150 s 150 s 85 100 10 ...
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... F 40mA 30mA 20mA 10mA 4mA Fig. 8 Collector Dark Current vs ˚ Test Circuit for Response Time Input Ambient Temperature 400 =4mA F 300 200 100 - ˚C ) Ambient temperature T a Ambient Temperature - 20V ˚C ) Ambient temperature T a Input Output Output GP1S39 = 100 10% 90 ...
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... Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) 100 Shield distance Please refer to the chapter “Precautions for Use”. Fig.11 Relative Collector Current vs Shield I = 4mA 25˚ Shield Distance ( 2 ) Shield 100 0.5 1 1.5 Shield distance GP1S39 4mA = 25˚ ...
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Application Circuits NOTICE The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any ...