FCH76N60N Fairchild Semiconductor, FCH76N60N Datasheet - Page 5
FCH76N60N
Manufacturer Part Number
FCH76N60N
Description
MOSFET N-CH 600V 76A TO-247
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet
1.FCH76N60N.pdf
(8 pages)
Specifications of FCH76N60N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
285nC @ 10V
Input Capacitance (ciss) @ Vds
12385pF @ 100V
Power - Max
543W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
28 mOhms
Forward Transconductance Gfs (max / Min)
90 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
76 A
Power Dissipation
543 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCH76N60N
Manufacturer:
ST
Quantity:
3 000
Part Number:
FCH76N60N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FCH76N60NF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FCH76N60N Rev. A
5