BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 14
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BF1205,135
Manufacturer Part Number
BF1205,135
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,135
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Gain
35dB
Voltage - Rated
10V
Current Rating
30mA
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
(4) V
V
Fig.20 Gate 1 current as a function of gate 1
DS
(μA)
I G1
(b) = 5 V; V
60
40
20
G2-S
G2-S
G2-S
G2-S
0
0
voltage; typical values; amplifier b.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
DS
0.4
(a) = V
G1-S
0.8
(a) = 0 V; T
(5) V
(6) V
(7) V
1.2
(2)
(1)
G2-S
G2-S
G2-S
j
= 25 C.
V G1-S (V)
= 2 V.
= 1.5 V.
= 1 V.
(4)
1.6
(3)
MGX447
(5)
(6)
(7)
2
14
handbook, halfpage
(1) V
(2) V
(3) V
V
Fig.21 Forward transfer admittance as a function
DS
(mS)
y fs
(b) = 5 V; V
40
30
20
10
G2-S
G2-S
G2-S
0
0
of drain current; typical values; amplifier b.
= 4 V.
= 3.5 V.
= 3 V.
DS
4
(a) = V
G1-S
8
(a) = 0 V; T
(4) V
(5) V
12
G2-S
G2-S
j
= 25 C.
Product specification
= 2.5 V.
= 2 V.
(1)
16
(2)
I D (mA)
BF1205
MGX448
(3)
(4)
(5)
20