BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 18

• Manufacturer Part Number: BF1205,135
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,135

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 35dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
reduction
Dual N-channel dual gate MOS-FET
gain
(dB)
Fig.28 Typical gain reduction as a function of AGC
V
R
T
amb
DS
G1
(b) = 5 V; V
(b) = 150 k (connected to V
20
40
60
= 25 C; see Fig.30.
0
0
voltage; amplifier b.
GG
= 5 V; V
1
DS
(a) = V
2
GG
); f = 50 MHz;
G1-S
(a) = 0 V;
3
V AGC (V)
MGX455
4
18
handbook, halfpage
V
R
T
Fig.29 Drain current as a function of gain
(mA)
DS
amb
G1
I D
(b) = 5 V; V
(b) = 150 k (connected to V
16
12
= 25 C; see Fig.30.
8
4
0
0
reduction; typical values; amplifier b.
GG
= 5 V; V
20
DS
(a) = V
GG
); f = 50 MHz;
G1-S
40
(a) = 0 V;
gain reduction (dB)
Product specification
BF1205
MGX456
60