BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 20
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BF1205,135
Manufacturer Part Number
BF1205,135
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,135
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Gain
35dB
Voltage - Rated
10V
Current Rating
30mA
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
I
Fig.33 Reverse transfer admittance and phase as
D
DS
(b) = 12 mA.
|
(μS)
y rs
10
10
(b) = 5 V; V
10
|
1
3
2
10
a function of frequency; typical values;
amplifier b.
G2-S
= 4 V; V
DS
(a) = V
10
2
|
ϕ rs
y rs
G1-S
|
(a) = 0 V;
f (MHz)
MGX459
10
3
−10
−10
−10
−1
(deg)
ϕ rs
3
2
20
handbook, halfpage
V
I
Fig.34 Output admittance as a function of
D
DS
(mS)
(b) = 12 mA.
y os
10 −
10 −
(b) = 5 V; V
10
1
1
2
10
frequency; typical values; amplifier b.
G2-S
= 4 V; V
DS
(a) = V
10
2
b os
g os
G1-S
(a) = 0 V;
f (MHz)
Product specification
BF1205
MGX460
10
3