BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 21

• Manufacturer Part Number: BF1205,135
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,135

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 35dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
Scattering parameters: amplifier b
V
Noise data
V
2003 Sep 30
(MHz)
DS
DS
1000
100
200
300
400
500
600
700
800
900
Dual N-channel dual gate MOS-FET
50
f
(b) = 5 V; V
(b) = 5 V; V
(MHz)
MAGNITUDE
400
800
f
(ratio)
0.987
0.985
0.978
0.968
0.956
0.941
0.924
0.905
0.884
0.861
0.837
G2-S
G2-S
= 4 V; I
= 4 V; I
s
11
ANGLE
14.63
21.82
28.92
35.99
42.93
49.89
56.57
63.36
70.05
D
D
3.76
7.38
(deg)
(b) = 12 mA; V
(b) = 12 mA; V
F MIN
(dB)
MAGNITUDE
1.3
1.4
(ratio)
3.12
3.09
3.06
3.01
2.95
2.89
2.83
2.75
2.67
2.59
3.11
DS
DS
(a) = 0 V; V
(a) = 0 V; V
s
21
ANGLE
175.87
171.77
163.72
155.67
147.79
139.86
132.06
124.31
116.69
108.97
101.39
(deg)
21
G1-S
G1-S
(ratio)
0.662
0.578
(a) = 0 V; T
(a) = 0 V; T
MAGNITUDE
0.00071
0.00136
0.00272
0.00396
0.00509
0.00616
0.00710
0.00791
0.00848
0.00900
0.00941
(ratio)
F MIN
(dB)
amb
amb
s
12
= 25 C
= 25 C
(deg)
16.76
33.97
ANGLE
85.43
86.06
84.25
82.63
81.35
79.46
78.57
77.88
76.72
76.55
76.67
(deg)
MAGNITUDE
(ratio)
0.991
0.989
0.988
0.986
0.983
0.973
0.975
0.972
0.968
0.964
0.959
Product specification
31.55
30.53
()
s
R
BF1205
22
n
ANGLE
12.17
15.16
18.15
21.07
24.08
27.03
30.02
(deg)
1.56
3.11
6.16
9.17