BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 7

• Manufacturer Part Number: BF1205,135
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,135

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 35dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
GRAPHS FOR AMPLIFIER a
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
(4) V
Fig.5
V
DS
(mA)
I D
(a) = 5 V; V
20
15
10
G2-S
G2-S
G2-S
G2-S
5
0
0
Transfer characteristics; typical values;
amplifier a.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
G1-S
0.4
(b) = V
DS
0.8
(b) = 0 V; T
(5) V
(6) V
(7) V
(3)
(2)
(1)
1.2
G2-S
G2-S
G2-S
j
= 25 C.
= 2 V.
= 1.5 V.
= 1 V.
(4)
1.6
V G1-S (V)
MGX432
(5)
(6)
(7)
2
7
handbook, halfpage
Fig.6
(1) V
(2) V
(3) V
(4) V
V
G2-S
(mA)
I D
24
16
G1-S
G1-S
G1-S
G1-S
= 4 V; V
8
0
0
Output characteristics; typical values;
amplifier a.
(a) = 1.4 V.
(a) = 1.3 V.
(a) = 1.2 V.
(a) = 1.1 V.
G1-S
2
(b) = V
DS
4
(b) = 0 V; T
(5) V
(6) V
(7) V
6
G1-S
G1-S
G1-S
j
= 25 C.
(a) = 1 V.
(a) = 0.9 V.
(a) = 0.8 V.
Product specification
8
V DS (V)
BF1205
MGX433
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10