BF1205,135 NXP Semiconductors, BF1205,135 Datasheet - Page 7
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BF1205,135
Manufacturer Part Number
BF1205,135
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,135
Package / Case
6-TSSOP, SC-88, SOT-363
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Gain
35dB
Voltage - Rated
10V
Current Rating
30mA
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
GRAPHS FOR AMPLIFIER a
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
(4) V
Fig.5
V
DS
(mA)
I D
(a) = 5 V; V
20
15
10
G2-S
G2-S
G2-S
G2-S
5
0
0
Transfer characteristics; typical values;
amplifier a.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
G1-S
0.4
(b) = V
DS
0.8
(b) = 0 V; T
(5) V
(6) V
(7) V
(3)
(2)
(1)
1.2
G2-S
G2-S
G2-S
j
= 25 C.
= 2 V.
= 1.5 V.
= 1 V.
(4)
1.6
V G1-S (V)
MGX432
(5)
(6)
(7)
2
7
handbook, halfpage
Fig.6
(1) V
(2) V
(3) V
(4) V
V
G2-S
(mA)
I D
24
16
G1-S
G1-S
G1-S
G1-S
= 4 V; V
8
0
0
Output characteristics; typical values;
amplifier a.
(a) = 1.4 V.
(a) = 1.3 V.
(a) = 1.2 V.
(a) = 1.1 V.
G1-S
2
(b) = V
DS
4
(b) = 0 V; T
(5) V
(6) V
(7) V
6
G1-S
G1-S
G1-S
j
= 25 C.
(a) = 1 V.
(a) = 0.9 V.
(a) = 0.8 V.
Product specification
8
V DS (V)
BF1205
MGX433
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10