BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 10
![MOSFET 2N-CH 10V 30MA SOT363](/photos/16/0/160094/sot363_sml.jpg)
BF1205,115
Manufacturer Part Number
BF1205,115
Description
MOSFET 2N-CH 10V 30MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BF1205135.pdf
(25 pages)
Specifications of BF1205,115
Package / Case
6-TSSOP, SC-88, SOT-363
Current Rating
30mA
Frequency
800MHz
Gain
35dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1.2dB
Current - Test
12mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
10 V
Continuous Drain Current
30 mA
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
handbook, full pagewidth
NXP Semiconductors
2003 Sep 30
handbook, halfpage
reduction
Dual N-channel dual gate MOS-FET
gain
(dB)
V
Fig.11 Gain reduction as a function of AGC
DS
(a) = V
20
40
60
0
0
voltage; typical values; amplifier a.
DS
(b) = 5 V; V
1
G1-S
R GEN
50 Ω
(b) = 0 V; f = 50 MHz; see Fig.13.
V i
2
Fig.13 Cross-modulation test set-up for amplifier a.
50 Ω
3
V AGC (V)
50 Ω
MGX438
4.7 nF
4.7 nF
4.7 nF
4
V AGC
V GG
0 V
10 kΩ
g1 (a)
g1 (b)
R G1
150 kΩ
g2
10
BF1205
handbook, halfpage
V
see Fig.13.
Fig.12 Drain current as a function of gain
(mA)
DS
I D
(a) = V
d (a)
s
d (b)
16
12
8
4
0
0
V DS (a)
V DS (b)
reduction; typical values; amplifier a.
5 V
5 V
DS
4.7 nF
4.7 nF
4.7 nF
L1
2.2 μH
L2
2.2 μH
(b) = 5 V; V
MGX440
20
R L
50 Ω
G1-S
(b) = 0 V; f = 50 MHz; T
gain reduction (dB)
40
Product specification
BF1205
MGX439
amb
= 25 C;
60