BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 6

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; T
Notes
1. For the MOS-FET not in use: V
2. Measured in Fig.13 test circuit.
2003 Sep 30
y
C
C
C
C
G
NF
X
SYMBOL
mod
Dual N-channel dual gate MOS-FET
ig1-ss
ig2-ss
oss
rss
tr
fs

forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
power gain
noise figure
cross-modulation
amb
PARAMETER
= 25 C; V
G2-S
G1-S
= 4 V; V
(b) = 0 V; V
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
f = 10.7 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1% at 0 dB AGC;
f
input level for k = 1% at 10 dB AGC;
f
input level for k = 1% at 40 dB AGC;
f
DS
w
w
w
j
L
L
L
= 25 C
= 50 MHz; f
= 50 MHz; f
= 50 MHz; f
= 5 V; I
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
DS
(b) = 0 V.
D
= 12 mA; note 1
CONDITIONS
6
L
L
unw
unw
unw
= B
= B
S
S
S
L
S
S
S
= B
= 3.3 mS; B
= Y
= Y
= 2 mS; B
= 2 mS; B
= 20 mS; B
= 60 MHz; note 2
= 60 MHz; note 2
= 60 MHz; note 2
L(opt)
L(opt)
L(opt)
S(opt)
S(opt)
S
S
S
= B
= B
S
= B
= 0
S(opt)
S(opt)
S(opt)
;
;
;
26




31
27
22



90

98
MIN.
31
1.8
3.3
0.75
20
35
31
26
4
1.1
1.2

90
102
TYP.
Product specification
40
2.3



39
35
30

1.7
1.9



BF1205
MAX.
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
UNIT