BF1205,115 NXP Semiconductors, BF1205,115 Datasheet - Page 8

• Manufacturer Part Number: BF1205,115
• Description: MOSFET 2N-CH 10V 30MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1205,115

• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 800MHz
• Gain: 35dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1.2dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2003 Sep 30
handbook, halfpage
Dual N-channel dual gate MOS-FET
(1) V
(2) V
(3) V
V
Fig.7
DS
(mS)
y fs
(a) = 5 V; V
40
30
20
10
G2-S
G2-S
G2-S
0
0
Forward transfer admittance as a function
of drain current; typical values; amplifier a.
= 4 V.
= 3.5 V.
= 3 V.
G1-S
4
(b) = V
DS
8
(b) = 0 V; T
(4) V
(5) V
12
G2-S
G2-S
j
= 25 C.
= 2.5 V.
= 2 V.
(1)
16
(2)
I D (mA)
MGX434
(3)
(4)
(5)
20
8
handbook, halfpage
V
Fig.8
DS
I D (a)
(mA)
(a) = 5 V; V
12
8
4
0
0
Drain current as a function of internal G1
current (current in pin drain (b) if MOS-FET
(b) is switched off); typical values; amplifier a.
G2-S
= 4 V; V
10
DS
(b) = 5 V; V
20
G1-S
Product specification
30
(b) = 0 V; T
I D (b) (μA)
BF1205
MGX435
j
= 25 C.
40