BPV11F Vishay, BPV11F Datasheet

Photodetector Transistors 15 Degree 150mW

BPV11F

Manufacturer Part Number
BPV11F
Description
Photodetector Transistors 15 Degree 150mW
Manufacturer
Vishay
Type
IR Chipr
Datasheets

Specifications of BPV11F

Maximum Power Dissipation
150 mW
Maximum Dark Current
50 nA
Collector- Emitter Voltage Vceo Max
70 V
Maximum Operating Temperature
+ 100 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
930nm
Power Consumption
150mW
Viewing Angle
15°
No. Of Pins
2
Light Current
9mA
Dark Current
50nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
50nA
Wavelength
930nm
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Transistor Case Style
T-1 3/4 (5mm)
Svhc
No SVHC (20-Jun-2011)
Current Ic Typ
9mA
Rohs Compliant
Yes
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
50nA
Power Dissipation
150mW
Peak Wavelength
930nm
Half-intensity Angle
30deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV11F
Manufacturer:
NEC
Quantity:
15
Company:
Part Number:
BPV11F
Quantity:
3 000
Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard T-1¾ plastic
package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (λ
The viewing angle of ± 15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
Features
Absolute Maximum Ratings
T
Document Number 81505
Rev. 1.5, 13-Nov-06
• Very high radiant sensitivity
• Standard T-1¾ (∅ 5 mm) package
• IR filter for GaAs emitters (950 nm)
• Angle of half sensitivity ϕ = ± 15°
• Base terminal available
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
t
T
t ≤ 5 s, 2 mm from body
p
amb
/T = 0.5, t
≤ 47 °C
p
≥ 900 nm).
Test condition
p
≤ 10 ms
e4
Applications
• Detector for industrial electronic circuitry, mea-
surement and control
Symbol
V
V
V
R
T
P
I
T
CBO
CEO
EBO
CM
I
thJA
T
stg
C
tot
sd
j
- 55 to + 100
Vishay Semiconductors
Value
100
150
100
260
350
80
70
50
5
BPV11F
www.vishay.com
K/W
Unit
mW
mA
mA
°C
°C
°C
V
V
V
1

Related parts for BPV11F

BPV11F Summary of contents

Page 1

... Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself filter, spectrally matched to GaAs IR emitters (λ p The viewing angle of ± 15° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control ...

Page 2

... BPV11F Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Collector Emitter Breakdown Voltage Collector-emitter dark current Current Gain MHz Collector-emitter capacitance MHz Collector - base capacitance CB Optical Characteristics °C, unless otherwise specified amb Parameter Collector Light Current mW/ Angle of Half Sensitivity ...

Page 3

... Rev. 1.5, 13-Nov-06 800 600 400 200 80 100 94 8250 Figure 6. Amplification vs. Collector Current 8240 Figure 7. Collector Base Capacitance vs. Collector Base Voltage 100 94 8247 Figure 8. Collector Emitter Capacitance vs. Collector BPV11F Vishay Semiconductors 100 0.01 0 – Collector Current (mA MHz 100 0 – Collector Emitter Voltage ( MHz 100 0 ...

Page 4

... BPV11F Vishay Semiconductors 100 Ω λ = 950 Collector Current (mA) 94 8253 C Figure 9. Turn On/Turn Off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 800 900 1000 λ – Wavelength (nm) 94 8258 Figure 10. Relative Spectral Sensitivity vs. Wavelength 0° 10° 1.0 0.9 0.8 ...

Page 5

... Package Dimensions in mm Document Number 81505 Rev. 1.5, 13-Nov-06 BPV11F Vishay Semiconductors 9612200 www.vishay.com 5 ...

Page 6

... BPV11F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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