BGA 612 H6327 Infineon Technologies, BGA 612 H6327 Datasheet - Page 8
BGA 612 H6327
Manufacturer Part Number
BGA 612 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet
1.BGA_612_H6327.pdf
(9 pages)
Specifications of BGA 612 H6327
Mounting Style
SMD/SMT
Operating Frequency
2 GHz
P1db
7 dBm
Noise Figure
2.1 dB
Operating Supply Voltage
2.8 V
Supply Current
20 mA
Maximum Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA612H6327XT
Data Sheet
Device Current I
R
Noise figure F = f(f)
V
T
A
CC
Bias
= parameter in °C
2.5
1.5
0.5
= 5V, R
80
70
60
50
40
30
20
10
= parameter in
0
3
2
1
0
0
0
Bias
0.5
1
= 135 , Z
D
Frequency [GHz]
= f(V
2
1
0
V
CC
CC
1.5
3
S
)
[V]
16
= 50
4
2
27
2.5
5
+80°C
+25°C
−20°C
100
150
47
68
6
3
8
Device Current I
V
CC
= 5V, R
25
24
23
22
21
20
19
18
17
16
15
−40
−20
Bias
= parameter in
D
= f(T
0
T
A
A
)
20
[°C]
Measured Parameters
40
Rev. 2.1, 2008-04-24
60
120
150
135
BGA612
80