AH125-89G TriQuint, AH125-89G Datasheet - Page 11

• Manufacturer Part Number: AH125-89G
• Description: RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz
• Manufacturer: TriQuint
• Type: General Purpose Amplifierr

Specifications of AH125-89G

• Bandwidth: 3600 MHz
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 3600 MHz
• P1db: 28 dBm
• Noise Figure: 4.4 dB @ 2140 MHz
• Operating Supply Voltage: 5 V
• Supply Current: 150 mA
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1070578

Application Note
½W High Linearity InGaP HBT Amplifier
Frequency
Gain
Input Return Loss
Output Return Loss
EVM
Output P1dB
Output IP3
Pout=+16 dBm/tone, 1MHz spacing
Quiescent Current, Icq
Vcc
Note: This reference design was constructed on FR4 to illustrate potential AH125 performance in the 3.4-3.6 GHz frequency range. For customer applications
of AH125 at these frequencies, we recommend the use of more suitable materials such as Rogers 3000 series.
TriQuint Semiconductor, Inc • Phone [phone] • FAX: [phone] • e-mail: [e-mail] • Web site: www.TriQuint.com
Circuit Board Material: 0.014” FR4, single layer, 1 oz copper, ε
Microstrip line details: width = .031”, spacing = .035”
Pout=+18 dBm
Typical O-FDMA Performance at 25°C
13
12
10
11
190
180
170
160
150
140
9
8
3.30
10
T
T
LEAD
LEAD
=+25°C
=+25°C
C1
12
3.40
3.4 GHz
Current vs Output Power
Gain vs. Frequency
14
R1
Output Power (dBm)
Frequency (GHz)
C10
+49.5 +45.7 45.2
11.5
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
+27
3.4
1.1
16
8
3.50
3.5 GHz
16
C3
C8
C4
C9
+27.3 +27.5 dBm
12.1
150
3.5
1.0
15
13
+5
C8
18
R2
3.60
3.6 GHz
C2
3.6
1.1
12
21
11
20
r
3.4-3.6 GHz Reference Design
= 4.3,
3.70
GHz
dBm
mA
22
dB
dB
dB
%
V
-10
-15
-20
-25
-30
20
15
10
-5
5
0
0
3.30
10
Notes:
1.
2.
3.
4.
5.
6.
T
T
LEAD
LEAD
=+25°C
=+25°C
The primary RF microstrip line is 50
Components shown on the silkscreen but not on the schematic are not used.
0
The edge of C9 is placed at 60 mil from AH125 RFout pin. (11.6
The edge of C10 is placed at 45 mil from AH125 RFin pin. (8.7
The edge of L2 is placed next to the edge of C10.
12
S11
Ω
3.40
jumpers can be replaced with copper trace in target application.
Return Loss vs. Frequency
Efficiency vs Output Power
S22
14
Output Power (dBm)
Frequency (GHz)
3.4 GHz
3.50
16
3.5 GHz
18
3.60
20
3.6 GHz
3.70
22
Ω
Specifications and information are subject to change without notice
.
55
50
45
40
35
5
4
3
2
1
0
12
10
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
T
1 MHz tone spacing
LEAD
=+25°C
12
14
OIP3 vs. Output Power/Tone
3.4 GHz
Output Power/Tone (dBm)
EVM vs. Output Power
14
Output Power (dBm)
o
o
@ 3.5 GHz)
3.5 GHz
@ 3.5 GHz)
3.4 GHz
16
16
Page 11 of 12 April 2010
18
3.5 GHz
3.6 GHz
T
LEAD
18
=+25°C
20
3.6 GHz
22
20