AH125-89G TriQuint, AH125-89G Datasheet - Page 3

• Manufacturer Part Number: AH125-89G
• Description: RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz
• Manufacturer: TriQuint
• Type: General Purpose Amplifierr

Specifications of AH125-89G

• Bandwidth: 3600 MHz
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 3600 MHz
• P1db: 28 dBm
• Noise Figure: 4.4 dB @ 2140 MHz
• Operating Supply Voltage: 5 V
• Supply Current: 150 mA
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1070578

AH125
½W High Linearity InGaP HBT Amplifier
Frequency
Gain
Input Return Loss
Output Return Loss
EVM
ACLR
Output P1dB
Output IP3
Pout=+18 dBm/tone, 1MHz spacing
Quiescent Current, Icq
Vcc
Note: For improved output return loss, ≥10dB, please contact TriQuint applications support for a reference design employing feedback. Corresponding OIP3
performance will be ~+43dBm.
TriQuint Semiconductor, Inc • Phone [phone] • FAX: [phone] • e-mail: [e-mail] • Web site: www.TriQuint.com
Pout=+18 dBm
Pout=+18 dBm
Typical O-FDMA Performance at 25°C
22
21
20
19
18
17
700
T
LEAD
=+25°C
720
Frequency (MHz)
Gain vs. Frequency
740
+28.9 +29.4 +29.2 dBm
+43.7 +46.2 +45.5 dBm
-52.6
20.4
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
700
7.5
0.9
12
5
4
3
2
1
0
760
15
20.3
750
150
-56
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
6.8
0.7
17
+5
16
780
-54.4
20.1
800
6.3
0.7
25
700 MHz
17
EVM vs. Output Power
700-800 MHz Reference Design
Output Power (dBm)
MHz
800
dBc
mA
dB
dB
dB
18
%
V
750 MHz
-10
-15
-20
-25
-30
-5
19
0
700
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
T
800 MHz
LEAD
20
The primary RF microstrip line is 50
Components shown on the silkscreen but not on the schematic are not used.
0
The edge of C11 is placed at 40 mil from AH125 RFout pin. (1.7
The edge of R3 is placed at 210 mil from the edge of C11. (8.7
The edge of C9 is placed next to the edge of R3.
The edge of R1 is placed at 100 mil from AH125 RFin pin. (4.2
The edge of C10 is placed 250 mil from the edge of R1. (10.4
=+25°C
T
Ω
720
LEAD
jumpers can be replaced with copper trace in target application.
=+25°C
21
Frequency (MHz)
740
Return Loss
22
S11
-40
-45
-50
-55
-60
-65
760
15
S22
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7 dB @ 0.01% Probability
3.84 MHz BW
780
16
700 MHz
ACLR vs. Output Power
Output Power (dBm)
800
17
Ω
Specifications and information are subject to change without notice
.
750 MHz
50
45
40
35
30
10
18
T
LEAD
800 MHz
T
=+25°C
LEAD
12
19
=+25°C
OIP3 vs. Output Power/Tone
700 MHz
Output Power/Tone (dBm)
o
o
14
@ 750 MHz)
20
o
@ 750 MHz)
o
@ 750 MHz)
@ 750 MHz)
750 MHz
16
Page 3 of 12 April 2010
800 MHz
18
20