AH125-89G TriQuint, AH125-89G Datasheet - Page 7
![RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz](/photos/15/97/159726/sot89_sml.jpg)
AH125-89G
Manufacturer Part Number
AH125-89G
Description
RF Amplifier 1/2W HI LIN HBT AMP 400-2700MHz
Manufacturer
TriQuint
Type
General Purpose Amplifierr
Datasheet
1.AH125-89PCB2140.pdf
(12 pages)
Specifications of AH125-89G
Bandwidth
3600 MHz
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
3600 MHz
P1db
28 dBm
Noise Figure
4.4 dB @ 2140 MHz
Operating Supply Voltage
5 V
Supply Current
150 mA
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1070578
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AH125-89G
Manufacturer:
TriQuint
Quantity:
5 000
Company:
Part Number:
AH125-89G
Manufacturer:
TRIQUINT
Quantity:
150
Part Number:
AH125-89G
Manufacturer:
WJ
Quantity:
20 000
AH125
½W High Linearity InGaP HBT Amplifier
Frequency
Gain
Input Return Loss
Output Return Loss
ACLR
Output P1dB
Output IP3
Noise Figure
Quiescent Current, Icq
Vcc
TriQuint Semiconductor, Inc • Phone 503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Pout=+18 dBm
Pout=+14dBm/tone, 1MHz spacing
Typical W-CDMA Performance at 25°C
19
18
17
16
15
14
-35
-40
-45
-50
-55
-60
-65
30
29
28
27
26
25
24
1.90
1.93
12
W‐CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
3.84 MHz BW
T
LEAD
=+25°C
1.94
1.92
14
C1
1930 MHz
R20
C20
ACLR vs. Output Power
-40°C
1.95
Gain vs. Frequency
P1dB vs. Frequency
Frequency (GHz)
Output Power (dBm)
1.94
Frequency (GHz)
R1
16
C10
1930-1990 MHz Reference Design (AH125-89PCB1960)
+27.8 +27.8 +27.7 dBm
1930 1960 1990 MHz
1960 MHz
+45
-53
4.5
17
12
10
+25°C
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
1.96
1.96
18
C4
C3
C8
C9
+47
1.97
150
C8
+85°C
-53
1960 MHz
4.6
17
16
+5
9
T
R2
LEAD
1.98
=+25°C
C2
20
1.98
+47
-53
4.6
17
23
8
2.00
22
1.99
dBm
dBc
mA
dB
dB
dB
dB
V
-10
-15
-20
-25
-30
200
180
160
140
120
100
55
50
45
40
35
-5
0
1.90
10
10
Notes:
1.
2.
3.
4.
5.
6.
T
LEAD
11
=+25°C
12
1.92
The primary RF microstrip line is 50 Ω.
Components shown on the silkscreen but not on the schematic are not used.
0
The edge of C9 is placed at 215 mil from AH125 RFout pin. (23.3
The edge of R1 is placed against the edge of C10.
The edge of C10 is placed at 80 mil from AH125 RFin pin. (8.7
Input Return Loss vs. Frequency
Ω
12
1930 MHz
OIP3 vs. Output Power/Tone
Current vs. Output Power
jumpers can be replaced with copper trace in target application.
4.75 V
-40°C
Output Power (dBm)
14
Frequency (GHz)
Output Power (dBm)
13
1.94
1960 MHz
+25°C
14
16
5.00 V
1.96
15
18
+85°C
T
1 MHz tone spacing
LEAD
1990 MHz
5.25 V
=+25°C
16
1.98
20
17
2.00
22
18
Specifications and information are subject to change without notice
55
50
45
40
35
6.0
5.0
4.0
3.0
2.0
-10
-15
-20
-25
-30
-5
0
1.93
1.90
1.90
1.94
1.92
1.92
Output Return Loss vs. Frequency
Noise Figure vs. Frequency
-40°C
1.95
-40°C
OIP3 vs. Frequency
Frequency (GHz)
Frequency (GHz)
1.94
Frequency (GHz)
1.94
1.96
o
+25°C
+25°C
@ 1960 MHz)
o
1.96
@ 1960 MHz)
1.96
1.97
+85°C
T
1 MHz tone spacing
Pout/tone=+14 dBm
+85°C
LEAD
Page 7 of 12 April 2010
=+25°C
1.98
1.98
1.98
2.00
1.99
2.00