BSM50GP120 Infineon Technologies, BSM50GP120 Datasheet - Page 10

• Manufacturer Part Number: BSM50GP120
• Description: IGBT Modules 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM50GP120

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100000
10000
1000
100
100
90
80
70
60
50
40
30
20
10
0
Durchlaßkennlinie der Gleichrichterdiode (typisch)
Forward characteristic of Rectifier Diode (typical)
0
0
NTC- Temperaturkennlinie (typisch)
NTC- temperature characteristic (typical)
20
0,2
40
0,4
BSM50GP120
Tj = 25°C
Tj = 150°C
60
T
V
C
F
0,6
10(11)
[°C]
[V]
Rtyp
80
R = f (T)
0,8
100
F
I
= f (V
1
120
F
)
1,2
140
160
1,4
DB-PIM-10.xls