BSM50GP120 Infineon Technologies, BSM50GP120 Datasheet - Page 3

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BSM50GP120

Manufacturer Part Number
BSM50GP120
Description
IGBT Modules 1200V 50A PIM
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM50GP120

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
360 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Infineon Technologies
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IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
Technische Information / Technical Information
Elektrische Eigenschaften / Electrical properties
100
100
T
V
V
I
V
V
I
V
V
I
V
V
V
V
V
f = 1MHz, T
V
V
V
V
T
T
T
T
T
R
BSM50GP120
F
F
F
C
vj
vj
C
C
C
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
CE
CE
GE
GE
CE
=I
=I
=I
2
= 25°C
= 25°C,
= 125°C,
= 25°C
= 100°C, R
= 25°C
= R
Nenn
Nenn
Nenn
= 0V, T
= 0V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= 15V, T
= 15V, T
= V
= 25 V, V
= 0V, T
= 0V, T
= 0V, V
1
,
,
,
GE
exp [B(1/T
,
GE
vj
vj
vj
vj
vj
T
= 25°C
GE
vj
vj
vj
vj
vj
vj
vj
vj
= 20V, T
100
= 25°C,
= 125°C,
= 25°C, V
= 125°C, V
vj
= 25°C,
= 125°C,
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
3(11)
= 0 V
= 25°C,
= 493 W
2
- 1/T
- di
- di
- di
vj
1
= 25°C
)]
F
F
F
I
I
/dt =
/dt =
/dt =
CE
CE
I
I
F
F
I
R
R
R
R
R
R
I
I
C
C
C
F
F
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
50 A
50 A
1600A/µs
600 V
600 V
1600A/µs
600 V
600 V
1600A/µs
600 V
600 V
25,0 A
25,0 A
1mA
1200 V
1200 V
25,0 A
25,0 A
R
V
V
DR/R
B
L
CC'+EE'
E
I
I
GE(TO)
C
CE sat
R
P
I
V
Q
CES
GES
V
25/50
sCE
RM
RQ
ies
25
25
F
F
r
min.
min.
min.
min.
min.
4,5
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3375
typ.
typ.
typ.
typ.
typ.
1,75
1,7
5,5
1,6
2,2
2,5
5,5
1,5
1,5
2,0
2,1
75
85
12
7
4
2
5
-
-
max.
max.
max.
max.
max.
2,55
100
500
300
2,2
6,5
2,4
20
5
-
-
-
-
-
-
-
-
-
-
-
-
-
DB-PIM-10.xls
mWs
mWs
µAs
mW
mW
µAs
mA
nH
kW
nF
µA
nA
%
V
V
A
A
V
V
V
V
V
K

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