BSM50GP120 Infineon Technologies, BSM50GP120 Datasheet - Page 7

• Manufacturer Part Number: BSM50GP120
• Description: IGBT Modules 1200V 50A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM50GP120

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
10
9
8
7
6
5
4
3
2
1
0
18
16
14
12
10
8
6
4
2
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
5
20
Eon
Eoff
Erec
Eon
Eoff
Erec
10
BSM50GP120
40
R
I
C
15
G
[A]
7(11)
[W]
T
E
T
on
j
E
= 125°C,
j
on
= 125°C, V
= f (I
60
= f (R
C
), E
20
G
), E
GE
off
V
= +-15 V ,
off
= f (I
GE
= ±15 V,
= f (R
80
C
), E
25
G
), E
rec
I
c
= I
= f (I
rec
nenn
R
Gon
= f (R
C
,
100
)
= R
V
V
30
CC
CC
G
Goff
)
=
=
=
600 V
15 Ohm
600 V
120
35
DB-PIM-10.xls