BSM200GB120DN2 Infineon Technologies, BSM200GB120DN2 Datasheet - Page 7
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BSM200GB120DN2
Manufacturer Part Number
BSM200GB120DN2
Description
IGBT Modules 1200V 200A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM200GB120DN2.pdf
(11 pages)
Specifications of BSM200GB120DN2
Configuration
Dual
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
290 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.4 KW
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge2
Module Configuration
Dual
Dc Collector Current
290A
Collector Emitter Voltage Vces
3V
Power Dissipation Pd
1.4kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +125°C
Rohs Compliant
Yes
Ic (max)
200.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON
Quantity:
45
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM200GB120DN2
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM200GB120DN2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM200GB120DN2
Quantity:
50
Company:
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
726
Part Number:
BSM200GB120DN2B
Manufacturer:
EUPEC
Quantity:
20 000
BSM 200 GB 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
10
100
C
ns
80
70
60
50
40
30
20
10
C
) , inductive load , T
CE
CE
0
4
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
100
100
GE
GE
200
200
= ± 15 V, R
= ± 15 V, R
j
j
= 125°C
= 125°C
300
300
G
G
= 4.7
= 4.7
A
A
tdoff
tdon
tr
tf
Eon
Eoff
I
I
C
C
500
500
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
100
ns
80
70
60
50
40
30
20
10
G
CE
CE
0
4
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
10
10
20
20
GE
GE
= ± 15 V, I
= ± 15 V, I
30
30
j
j
= 125°C
= 125°C
40
40
C
C
= 200 A
= 200 A
Oct-21-1997
tdoff
tdon
tr
tf
Eon
Eoff
R
R
G
G
60
60